A one-dimensional DC model for nonrectangular IGFETs

Girczyc, E.F.; Boothroyd, Arthur

doi:10.1109/jssc.1983.1052032

Cited by 7 publications

(3 citation statements)

References 7 publications

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“…However, in fork a-Si: H TFT, due to the unique device geometry, we can expect that ⌬L would be different depending on the drain bias condition and the position of drain and source electrodes. 10 If the drain bias fully depletes the channel by ⌬L from the edge of the drain electrode, the electric field at the depletion-region edge of the drain electrode can be expressed by Gauss' law; the charge contained in a volume ͑͒ equals the permittivity ͑ a-Si ͒ of a-Si: H times the electric field emanating from the volume,…”

Section: Discussion Of A-si : H Tft Geometry Effectmentioning

confidence: 99%

Asymmetric electrical properties of fork a-Si:H thin-film transistor and its application to flat panel displays

Lee

Yoo

Yoo³

et al. 2009

Journal of Applied Physics

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Inverted stagger hydrogenated amorphous silicon ͑a-Si: H͒ fork-shaped thin-film transistors ͑TFTs͒ were fabricated with a five-photomask process used in the processing of the active-matrix liquid crystal displays ͑AM-LCDs͒. We investigated the asymmetric electrical characteristics of a fork-shaped a-Si: H TFT under different bias conditions. To extract the electrical device parameters, we developed asymmetric geometrical factors. Current-voltage measurements indicate that the ON-OFF current ratio of fork TFT can be enhanced significantly by choosing the outer electrode as the drain, while the field-effect mobility and threshold voltage have the identical values when different drain bias conditions are used. Finally, we developed concepts of its possible application to AM-LCDs.

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Section: Discussion Of A-si : H Tft Geometry Effectmentioning

confidence: 99%

Asymmetric electrical properties of fork a-Si:H thin-film transistor and its application to flat panel displays

Lee

Yoo

Yoo³

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Details on the modelling and characterization of Corbino TF can be found in Refs. [18]- [20]. We propose, here, the use of the Corbino TFT as the driving TFT of the conventional 2T1C AMOLED pixel (Figure 3).…”

Section: Tft Fabricationmentioning

confidence: 99%

“…This increases the power consumption of the display. Recently we reported a Corbino (circular) a-IGZO TFT with infinite output resistance beyond pinch-off, when the outer electrode is the drain electrode [18]- [20]. Note that the Corbino TFT consists of inner and outer concentric ring electrodes.…”

Section: Introductionmentioning

confidence: 99%