Inverted stagger hydrogenated amorphous silicon ͑a-Si: H͒ fork-shaped thin-film transistors ͑TFTs͒ were fabricated with a five-photomask process used in the processing of the active-matrix liquid crystal displays ͑AM-LCDs͒. We investigated the asymmetric electrical characteristics of a fork-shaped a-Si: H TFT under different bias conditions. To extract the electrical device parameters, we developed asymmetric geometrical factors. Current-voltage measurements indicate that the ON-OFF current ratio of fork TFT can be enhanced significantly by choosing the outer electrode as the drain, while the field-effect mobility and threshold voltage have the identical values when different drain bias conditions are used. Finally, we developed concepts of its possible application to AM-LCDs.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.