A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons

Yazdanpanah, Abolfazl; Pourfath, Mahdi; Fathipour, Morteza; Kosina, H.; Selberherr, S.

doi:10.1109/ted.2011.2173690

Cited by 60 publications

(37 citation statements)

References 40 publications

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“…Figure 6d shows the effect of line-edge roughness on the off-state and on-state currents of GNR FET with the channel of GNR (15,0). It can be seen that the analytical model agrees very well with the numerical simulations, which can be obtained at the expense of long computational time by statistical averaging many GNR samples with the same roughness parameters [14]. Furthermore, the GNR FET with perfectly smooth edges can have more than three orders of magnitude difference between on-and off-currents.…”

Section: Model Validationsupporting

confidence: 67%

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Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

Banadaki

Srivastava

2016

Electronics

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Abstract:In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regimes, the off-current is initially increased, then decreased; while, on the other hand, the on-current is continuously decreased by increasing the roughness amplitude.

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Section: Model Validationsupporting

confidence: 67%

“…It has been shown both experimentally [13,53] and theoretically [14] that strong localization can appear in a single-layer GNR for large line-edge roughness, known as Anderson-type localization [54]. Edge-disorder increases the number of localized carriers and their corresponding density of …”

Section: Validation Of Single-particle Calculationsmentioning

confidence: 99%

Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

Banadaki

Srivastava

2016

Electronics

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“…In (1), W is the rms of the roughness amplitude and L is the roughness correlation length. The LER in the real space is achieved by adding a random phase to the power spectrum followed by an inverse Fourier transform [1], [41].…”

Section: Model and Methodsmentioning

confidence: 99%

“…Recently, the electrical properties and device performance of AGNR-based field-effect transistors in the presence of line-edge-roughness (LER) and electron-phonon scattering are studied [1], [27]- [31]. On the other hand, several studies are recently conducted on the thermal properties of rough GNRs [32]- [37].…”

mentioning

confidence: 99%

“…In addition, recent experimental studies on the thermal conductivity of silicon nanowires have demonstrated that besides the root mean square (rms) of the roughness amplitude, the roughness correlation length can also influence the thermal conductivity [38], [39]. Therefore, in this paper we use an exponential autocorrelation function to model the LER, which captures more details of realistic edges [1]. We numerically study the effects of the ribbon's geometrical parameters as well as roughness parameters, to show how these parameters can be used for engineering the thermal properties.…”

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confidence: 99%

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Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons

Karamitaheri

Pourfath

Faez

et al. 2013

IEEE Trans. Electron Devices

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Following our recent study on the electronic properties of rough nanoribbons [1], in this paper the role of geometrical and roughness parameters on the thermal properties of armchair graphene nanoribbons is studied. Employing a fourth nearest-neighbor force constant model in conjuction with the nonequilibrium Green's function method the effect of lineedge-roughness on the lattice thermal conductivity of rough nanoribbons is investigated. The results show that a reduction of about three orders of magnitude of the thermal conductivity can occur for ribbons narrower than 10 nm. The results indicate that the diffusive thermal conductivity and the effective mean free path are directly proportional to the ribbon's width and the roughness correlation length, but inversely proportional to the roughness amplitude. Based on the numerical results an analytical model for the thermal conductivity of narrow armchair graphene nanoribbons is proposed in this paper. The developed model can be used in the analysis of graphene-based nano transistors and thermoelectric devices, where the appropriate selection of geometrical and roughness parameters are essential for optimizing the thermal properties.

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2‐D Materials and Devices

Tsuchiya¹,

Kamakura²

2016

Carrier Transport in Nanoscale MOS Transistors

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A Numerical Study of Line-Edge Roughness Scattering in Graphene Nanoribbons

Cited by 60 publications

References 40 publications

Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene Nanoribbons

2‐D Materials and Devices

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