Effect of Edge Roughness on Static Characteristics of Graphene Nanoribbon Field Effect Transistor

Abstract

Abstract:In this paper, we present a physics-based analytical model of GNR FET, which allows for the evaluation of GNR FET performance including the effects of line-edge roughness as its practical specific non-ideality. The line-edge roughness is modeled in edge-enhanced band-to-band-tunneling and localization regimes, and then verified for various roughness amplitudes. Corresponding to these two regimes, the off-current is initially increased, then decreased; while, on the other hand, the on-current is continuously decreased by increasing the roughness amplitude.

Two-Dimensional Electronics - Prospects and Challenges

“…This Special Issue comprises a total of 12 papers (four review papers and eight contributed articles) and spans a wide range of topics, which extend from first principle band structure calculations [14] and molecular dynamics simulations of the thermal properties [15] of 2D materials, over numerical simulations and compact modeling of 2D transistors [16][17][18] and other 2D devices [19,20], 2D material growth [21,22] and processing issues [22][23][24], up to experimental 2D devices and their applications [22,23,25]. Regarding the materials, the papers of the Special Issue deal with graphene and graphene nanoribbons [16][17][18][19][20]22,23,25], TMDs (transition metal dichalcogenide) [14,21,22,24,25], phosphorene, which frequently is called 2D black phosphorus [24,25], and 2D metal oxides [25].…”

“…Regarding the materials, the papers of the Special Issue deal with graphene and graphene nanoribbons [16][17][18][19][20]22,23,25], TMDs (transition metal dichalcogenide) [14,21,22,24,25], phosphorene, which frequently is called 2D black phosphorus [24,25], and 2D metal oxides [25]. Finally, the papers discuss More Moore electronics and transistors [16][17][18], as well as applications belonging to the More Than Moore domain of semiconductor electronics, including optoelectronics [22], RF electronics [16,23], sensors [20,25], and field emitters [19].…”

Two-Dimensional Electronics — Prospects and Challenges

“…Banadaki and Srivastava investigate the effects of band-to-band tunneling and edge roughness on the behavior of graphene nanoribbon MOSFETs [18]. Nanmeni Bondja and coworkers study the steady-state and RF performance of graphene nanoribbon transistors by numerical device simulations [16].…”

“…Regarding the materials, the papers of the Special Issue deal with graphene and graphene nanoribbons [16][17][18][19][20]22,23,25], TMDs (transition metal dichalcogenide) [14,21,22,24,25], phosphorene, which frequently is called 2D black phosphorus [24,25], and 2D metal oxides [25]. Finally, the papers discuss More Moore electronics and transistors [16][17][18], as well as applications belonging to the More Than Moore domain of semiconductor electronics, including optoelectronics [22], RF electronics [16,23], sensors [20,25], and field emitters [19].…”

“…This Special Issue comprises a total of 12 papers (four review papers and eight contributed articles) and spans a wide range of topics, which extend from first principle band structure calculations [14] and molecular dynamics simulations of the thermal properties [15] of 2D materials, over numerical simulations and compact modeling of 2D transistors [16][17][18] and other 2D devices [19,20], 2D material growth [21,22] and processing issues [22][23][24], up to experimental 2D devices and their applications [22,23,25]. Regarding the materials, the papers of the Special Issue deal with graphene and graphene nanoribbons [16][17][18][19][20]22,23,25], TMDs (transition metal dichalcogenide) [14,21,22,24,25], phosphorene, which frequently is called 2D black phosphorus [24,25], and 2D metal oxides [25].…”