A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films

Lee, B.; Choi, Kyu Jeong; Hande, A.; Kim, M. J.; Wallace, Robert M.; Kim, J.; Senzaki, Yoshihide; Shenai, Deo; Li, H.; Rousseau, M.; Suydam, J.

doi:10.1016/j.mee.2008.03.020

Cited by 80 publications

(44 citation statements)

References 24 publications

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“…Such combination of properties is attractive for other applications, including laser mirrors, broadband interference filters. Additionally, thin ZrO 2 films are considered as a potential candidate to replace SiO 2 as the high-k gate dielectric in complementary metaloxide-semiconductor technology, due to its high dielectric constant (15)(16)(17)(18)(19)(20)(21)(22)(23)(24)(25)(26)(27)(28)(29)(30), wide energy band and offsets, and a good thermal stability when in contact with silicon surface [6,7].…”

Section: Introductionmentioning

confidence: 99%

“…These interesting properties and applications lead to numerous efforts to synthesize ZrO 2 and ZnO films by various techniques, including chemical vapor deposition (CVD) [12,13], chemical solution deposition [14], atomic layer deposition (ALD) [15,16], electron beam deposition, and sputtering [17,18], among them, sol-gel technology being very perspective and low cost [19,20].…”

Section: Introductionmentioning

confidence: 99%

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Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO₂ films

Ivanova

Harizanova

Koutzarova

et al. 2010

Cryst. Res. Technol.

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Mixed ZnO-ZrO 2 films have been obtained by sol-gel technology. By using spin coating method, the films were deposited on Si and glass substrates. The influence of thermal annealings (the temperatures vary from 400 °C to 750 °C) on their structural properties has been studied. The structural behavior has been investigated by the means of XRD and FTIR techniques. The results revealed no presence of mixed oxide phases, the detected crystal phases were related to the hexagonal ZnO and to crystalline ZrO 2 . The sol-gel ZnO-ZrO 2 films showed polycrystalline structure with a certain degree of an amorphous fraction. The optical transmittance reached 91% and it diminished with increasing the annealing temperatures. The optical properties of the sol-gel ZnO-ZrO 2 films, deposited on glass substrates are excellent with high transparency and better then those of pure ZrO 2 films, obtained at similar technological conditions.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO₂ films

Ivanova

Harizanova

Koutzarova

et al. 2010

Cryst. Res. Technol.

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“…A very useful precursor for lanthanum is tris(N,N 0 -diisopropylformamidinato)lanthanum [56,57], which is also the most volatile lanthanum compound known: For tetravalent metal amidinates, only the smallest alkyl groups, such as methyl groups, can fit around even large metals, such as zirconium or hafnium [58]. An example is tetrakis(N,N 0 -dimethylformamidinato)zirconium, an extremely stable ALD precursor for zirconium oxide [59,60] Ligand sizes on metal amidinates can generally be chosen so that they have high reactivity to many non-metal precursors, such as water vapor, ammonia, hydrogen sulfide, and even molecular hydrogen. Direct liquid injection can be used to vaporize liquid amidinates [61], as well as solid ones dissolved in inert hydrocarbon solvents.…”

Section: Types Of Ald Precursors For Metalsmentioning

confidence: 99%

ALD Precursors and Reaction Mechanisms

Gordon

2013

Atomic Layer Deposition for Semiconductors

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ALD has become accepted as a reliable tool for production of thin films in the microelectronics industry. Dielectrics and metal electrodes for DRAM capacitors are now routinely produced by ALD, which is the only technique capable of uniformly coating inside the narrow structures required by current technology. Transistors will soon be produced as 3D structures, with requirements for conformal coatings over their increasingly complex surfaces. Metal circuits between transistors are also pushing toward narrower and deeper structures, such as through-silicon vias. In order to extend the use of ALD into these new areas, a greater variety of materials will need to be deposited.Successful use of ALD requires suitable chemical precursors used under reaction conditions that are appropriate for them. There are many requirements for ALD precursors: sufficient volatility, thermal stability, and self-limited reactivity with substrates and with the films being deposited. The precursor vapor should not etch or corrode the substrate or deposited film. In addition, it is easier to produce the required vapors if the precursor is liquid at room temperature, or if it is a solid with a melting point below its vaporization temperature, or if it is soluble in an inert solvent with vapor pressure similar to that of the precursor. Ideally, the precursors should be non-flammable, non-corrosive, non-toxic, non-hazardous, and simple and inexpensive to make. In applications of ALD to microelectronics, precursors with high purity may be required.It is not easy to find ideal precursors that satisfy all of these requirements. When the properties of precursors are inadequate, satisfactory ALD results cannot be achieved.

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“…Other precursors where Zr is bonded to nitrogen include the amidinates, [44] diamides and amide-amines. [71] The group of amidinates has been used for metal ALD [72] and recently also for ZrO 2 .…”

Section: Ald Of Tio 2 Doped Tio 2 and Alkaline Earth Titanatesmentioning

confidence: 99%

Atomic Layer Deposition of High‐k Oxides of the Group 4 Metals for Memory Applications

et al. 2009

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This paper reviews several high‐k ALD processes potentially applicable to the production of capacitors, concentrating on very recent developments. A list of the dielectric materials under investigation consists of the oxides of several metals, including the Group 4 (Ti, Zr, Hf) elements. The binary oxides of Group 4 metals, as well as their mixtures with other oxides, doped hosts, or multi‐layers in the form of nano‐laminates are of interest.Several examples of our recent results are shown, including possible ALD routes to materials not previously grown, as well as advances in process development.

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A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films

Cited by 80 publications

References 24 publications

Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO₂ films

Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO₂ films

ALD Precursors and Reaction Mechanisms

Atomic Layer Deposition of High‐k Oxides of the Group 4 Metals for Memory Applications

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A novel thermally-stable zirconium amidinate ALD precursor for ZrO2 thin films

Cited by 80 publications

References 24 publications

Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO2 films

Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO2 films

ALD Precursors and Reaction Mechanisms

Atomic Layer Deposition of High‐k Oxides of the Group 4 Metals for Memory Applications

Contact Info

Product

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Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO₂ films

Effect of annealing temperatures on properties of sol‐gel grown ZnO‐ZrO₂ films