A Novel Thermal Spectrum Analysis Method for Reliability Analysis of Semiconductor Devices

Yangjun, Zhu; Chen, Miao; Qinghai, Miao; Zhang, Xinghua; Lu, Shengyong

doi:10.1109/ccece.2007.219

Cited by 2 publications

(1 citation statement)

References 8 publications

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“…For simplicity, the result of TIM based on the QFI InfraScope II is designated the infrared peak; the result of SEM based on the BJ2984 testing instrument is designated BJ2984; and the result of TSA based on the NC2992 analytical instrument is designated the TSA peak. Note that the infrared peak in Table 1 is not the highest temperature in the thermal images, but the inner average temperature of the effective area (A E ) transformed from the whole chip area [11] . The purpose of transformation from the whole chip to the effective area obtained in TSA is to compare expediently between TIM and TSA.…”

Section: September 2009mentioning

confidence: 99%

A novel electrical measurement method of peak junction temperature based on the excessive thermotaxis effect of low current

Yangjun¹,

Qinghai²,

Zhang³

et al. 2009

J. Semicond.

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It has been a scientific and technological problem in the field of microelectronics for several decades that the electrical method is used to measure the peak junction temperature of power transistors. Based on the excessive thermotaxis effect of low current, a novel electrical measurement method of the peak junction temperature is presented in this paper. The method is called the thermal spectrum analysis method of transistors, simply designated TSA (thermal spectrum analysis method). Unlike the common method which uses a single measuring current, TSA uses multi-step currents to measure temperature-sensitive parameters. Based on the excessive thermotaxis effect of low current and the sub-transistor parallel model, the peak junction temperature and non-uniform property of junction temperature distribution are analyzed successfully.

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Section: September 2009mentioning

confidence: 99%