A novel temperature compensated piezoresistive pressure sensor

Aryafar, M.; Hamedi, Mohsen; Ganjeh, M.M.

doi:10.1016/j.measurement.2014.11.032

Cited by 76 publications

(52 citation statements)

References 10 publications

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“…One way to introduce a dummy unit is doping the piezoresistors in the substrate and the resistance only changes with temperature [109,110,111]. And this method is equally effective for accelerometers [112].…”

Section: Improvement In Thermal-performance Stabilitymentioning

confidence: 99%

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Liu

Wang

Zhao

et al. 2016

Sensors

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The field of piezoresistive sensors has been undergoing a significant revolution in terms of design methodology, material technology and micromachining process. However, the temperature dependence of sensor characteristics remains a hurdle to cross. This review focuses on the issues in thermal-performance instability of piezoresistive sensors. Based on the operation fundamental, inducements to the instability are investigated in detail and correspondingly available ameliorative methods are presented. Pros and cons of each improvement approach are also summarized. Though several schemes have been proposed and put into reality with favorable achievements, the schemes featuring simple implementation and excellent compatibility with existing techniques are still emergently demanded to construct a piezoresistive sensor with excellent comprehensive performance.

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Section: Improvement In Thermal-performance Stabilitymentioning

confidence: 99%

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Liu

Wang

Zhao

et al. 2016

Sensors

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show abstract

“…A method of thermocompensation, described in [12], utilizes new possibilities of semiconductor technologies and implies using additional polysilicon resistors with a negative coefficient of resistance (TCR). However, the results of this study cannot be applied to eliminate the implications of effect of nonstationary temperature on the sensor, especially to compensate for the effect of membrane thermodeflection.…”

Section: Efectmentioning

confidence: 99%

Efect of the membrane thermodeflection on the accuracy of a tensoresistive pressure sensor

Tykhan

Mokrytskyy

Teslyuk

2017

EEJET

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“…However, the sensitivity of a polysilicon piezo-resistive pressure sensor is always lower compared to a single crystalline piezoresistive pressure sensor because of the lower gauge factor of polysilicon than that of single crystalline silicon [14]. There have been several methods to improve the sensitivity of polysilicon piezoresistors such as an optimization of the resistor design [5], a new polysilicon growing method [12], thin polysilicon [15], and dopant control [16]. For this paper, we used a thin polysilicon resistor, a thin and low-stress sensing diaphragm, and a deep cavity using a novel fabrication method to improve the sensitivity.…”

Section: Polysilicon Piezoresistormentioning

confidence: 99%

Surface Micromachined Pressure Sensor with Substrate Internal Vacuum Cavity

Je¹,

Choi²,

Lee³

et al. 2016

ETRI J

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A surface micromachined piezoresistive pressure sensor with a novel internal substrate vacuum cavity was developed. The proposed internal substrate vacuum cavity is formed by selectively etching the silicon substrate under the sensing diaphragm. For the proposed cavity, a new fabrication process including a cavity side‐wall formation, dry isotropic cavity etching, and cavity vacuum sealing was developed that is fully CMOS‐compatible, low in cost, and reliable. The sensitivity of the fabricated pressure sensors is 2.80 mV/V/bar and 3.46 mV/V/bar for a rectangular and circular diaphragm, respectively, and the linearity is 0.39% and 0.16% for these two diaphragms. The temperature coefficient of the resistances of the polysilicon piezoresistor is 0.003% to 0.005% per degree of Celsius according to the sensor design. The temperature coefficient of the offset voltage at 1 atm is 0.0019 mV and 0.0051 mV per degree of Celsius for a rectangular and circular diaphragm, respectively. The measurement results demonstrate the feasibility of the proposed pressure sensor as a highly sensitive circuit‐integrated pressure sensor.

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A novel temperature compensated piezoresistive pressure sensor

Cited by 76 publications

References 10 publications

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Thermal-Performance Instability in Piezoresistive Sensors: Inducement and Improvement

Efect of the membrane thermodeflection on the accuracy of a tensoresistive pressure sensor

Surface Micromachined Pressure Sensor with Substrate Internal Vacuum Cavity

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