A novel symmetrical microwave power sensor based on GaAs monolithic microwave integrated circuit technology

Wang, Debo; Liao, Xiaoping

doi:10.1088/0960-1317/19/12/125012

Cited by 28 publications

(16 citation statements)

References 10 publications

(19 reference statements)

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“…This sensitivity is higher than the 3.4 × 10 −3 V/W in [ 11 ] and the 0.16 × 10 −3 V/W in [ 12 ] of the proposed self-heating power sensors. Our sensitivity is also higher than the 0.85 × 10 −3 V/W reported in [ 13 ] and the 0.2 × 10 −3 V/W in [ 14 ] of the reported GaAs-based indirect-heating power sensors.…”

Section: Introductioncontrasting

confidence: 55%

Micro-Fabricated DC Comparison Calorimeter for RF Power Measurement

Neji

Titus

et al. 2014

Sensors

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Diode detection and bolometric detection have been widely used to measure radio frequency (RF) power. However, flow calorimeters, in particular micro-fabricated flow calorimeters, have been mostly unexplored as power meters. This paper presents the design, micro-fabrication and characterization of a flow calorimeter. This novel device is capable of measuring power from 100 μW to 200 mW. It has a 50-Ohm load that is heated by the RF source, and the heat is transferred to fluid in a microchannel. The temperature change in the fluid is measured by a thermistor that is connected in one leg of a Wheatstone bridge. The output voltage change of the bridge corresponds to the RF power applied to the load. The microfabricated device measures 25.4 mm × 50.8 mm, excluding the power supplies, microcontroller and fluid pump. Experiments demonstrate that the micro-fabricated sensor has a sensitivity up to 22 × 10−3 V/W. The typical resolution of this micro-calorimeter is on the order of 50 μW, and the best resolution is around 10 μW. The effective efficiency is 99.9% from 0–1 GHz and more than 97.5% at frequencies up to 4 GHz. The measured reflection coefficient of the 50-Ohm load and coplanar wave guide is less than −25 dB from 0–2 GHz and less than −16 dB at 2–4 GHz.

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Section: Introductioncontrasting

confidence: 55%

Micro-Fabricated DC Comparison Calorimeter for RF Power Measurement

Neji

Titus

et al. 2014

Sensors

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“…By substituting the Eq. (3) in (2), it is easy to notice that the rate of the generation of the excess charge carriers is proportional to the photon flux.…”

Section: Methodsmentioning

confidence: 99%

“…Currently, research is focused on providing materials for a new type of devices which can operate in a broader temperature range and at higher frequencies while withstanding both higher current densities and higher electric fields. An important group of the materials are semi-insulating monocrystals, characterized with resistivities above 10 5 Ω cm, which are intended for use in microelectronics as substrates for new generation of integrated circuits and in electroenergetics as bulk materials for photoconductive semiconductor switches (PCSSes) 1 , 2 .…”

Section: Introductionmentioning

confidence: 99%

Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC

Suproniuk

Wierzbowski

Paziewski

2020

Sci Rep

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The effect of generation rate on transient photoconductivity of semi-insulating (SI) 4H-SiC is discussed. The rate of generation of electron-hole pairs is dependent on the number of photons incident on the sample material and its absorption and reflection coefficients. The number of photons and their energy is dependent on the radiation power and wavelength of the light source illuminating the material. The results of research, obtained with a specialized simulator, present the influence of changes in the filling of individual defect centres' levels on changes in conductivity of the test material observed after switching on the photoexcitation. For the purpose of simulations, presented is a versatile model of semiconductor material. It encompasses six point defects that appear in SI 4H-SiC materials the most often. Those defect centres correspond to Z 1/2 recombination centre, deep electron and deep hole traps, nitrogen-related shallow donors of two kinds and a boron-related shallow acceptor. The simulation results can be used to design and determine properties of photoconductive switches. In recent years, there is intensive research being conducted which aims at developing semiconductor materials with new properties that allow to design devices for new system solutions in power electronics. The new material properties are obtained with defect structure engineering, which involves introducing defect centres with certain properties into a semiconductor material. Currently, research is focused on providing materials for a new type of devices which can operate in a broader temperature range and at higher frequencies while withstanding both higher current densities and higher electric fields. An important group of the materials are semi-insulating monocrystals, characterized with resistivities above 10 5 Ω cm, which are intended for use in microelectronics as substrates for new generation of integrated circuits and in electroenergetics as bulk materials for photoconductive semiconductor switches (PCSSes) 1,2. Currently, one of the most widely used materials for the application is semi-insulating silicon carbide (SI SiC) 3. Its properties are desired in electroenergetics for manufacturing hybrid switches 4. Additionally, its wide band gap enables devices based one the semi-insulating silicon carbide to operate in a range of temperatures up to 600 °C. Designing such devices requires an efficient method of investigation of the material electrical properties. One of the most often used method is photo-induced transient spectroscopy (PITS) 5,6. The method is intended for investigating defect structure of semiconductor materials and involves filling defect centres' levels with excess electrons or holes generated during illumination of the test material with a pulse of light and then measuring the transient waveform of photocurrent relaxation induced by thermal emission of charge carriers after turning the photoexcitation off 5,6. As the principle of operation of the photoconductive switches is based on the photoconductivit...

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“…where P r is the consumed microwave power of load resistor, a ¼ a Â f b is the loss coefficient of CPW (Haydl et al 1992;George et al 1999;Wang and Xiao 2009), P in is the input microwave power of CPW, l 1 is the length of CPW.…”

Section: Voltage Source Modelmentioning

confidence: 99%

A voltage source model on thermoelectric power sensor based on MEMS technology

Wang

Liao

2011

Microsyst Technol

Self Cite

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In order to achieve monolithic integration of thermoelectric power sensor and its amplification system and improve the measurement accuracy of microwave power, a voltage source model is researched in this paper. And the thermoelectric power sensor is designed and fabricated using MEMS technology and GaAs MMIC process. It is measured in the X-band (8-12 GHz) with the input power in 100 mW range. When the input microwave power is at 10, 50 and 100 mW, respectively, the frequency dependent coefficient k 1 is -0.073, -0.39 and -0.82 mV/ GHz, respectively. The sensitivity coefficient k 2 is 0.311, 0.303, 0.293, 0.284 and 0.279 mV/mW at 8, 9, 10, 11 and 12 GHz, respectively, and has an excellent linearity. Based on the voltage source model, the feedback coefficient of its amplification system is set to 0.0078 9 P in to compensate the loss power caused by frequency dependent characteristic. In addition to miniaturization and low cost, an advantage using this model is significantly improved measurement accuracy.

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A novel symmetrical microwave power sensor based on GaAs monolithic microwave integrated circuit technology

Cited by 28 publications

References 10 publications

Micro-Fabricated DC Comparison Calorimeter for RF Power Measurement

Micro-Fabricated DC Comparison Calorimeter for RF Power Measurement

Effect of generation rate on transient photoconductivity of semi-insulating 4H-SiC

A voltage source model on thermoelectric power sensor based on MEMS technology

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