A novel surface treatment for the sliver ohmic contacts to P-GaN

Qi, Chenglin; Wang, Qinjin; Wang, Li; Liu, Zhiqiang; Yi, Xiaoyan; Li, Jinmin; Wang, Junxi

doi:10.1109/sslchina.2016.7804338

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2019

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“…Furthermore, the peak electric field at the edges can be reduced by extension of PN junction in depletion layer. However, the p + -GaN implantation method with high-temperature annealing conditions can increase the significant risk and complexity of the p-guard ring fabrication [52][53][54][55][56][57][58].…”

Section: Field Ringsmentioning

confidence: 99%

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

et al. 2019

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Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

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