Abstract:2613-l, Ichinomoto-cho, Tenri-shi, Nara 63 Z, J apan A novel source-side injection split-gate Flash cell with a self-alignedoff-set source (SOS) is proposed for high density low voltageapplications. The SOS split-gate cellmakes it possible to realizenot only SV-only but also 3.3V-only programmingby improvingfurther the programming efficiencyof source-side injectioncells. This cell is suitable for low voltage read-out due to its no-overerase structure. A small cell area of 3.6pm2 with 0.6pm technology acceptabl… Show more
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