A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arrays

Tennant, W. E.; Thomas, Maikael A.; Kozlowski, Lester J.; McLevige, W. V.; Edwall, D. D.; Zandian, Majid; Spariosu, Kalin; Hildebrand, G; Gil, V.; Ely, P.; Muzilla, M.; Stoltz, A. J.; Dinan, J. H.

doi:10.1007/bf02665839

Cited by 65 publications

(35 citation statements)

References 3 publications

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“…Considerable progress has been recently demonstrated in multispectral HgCdTe detectors employing MBE and MOCVD for the growth of variety devices [54][55][56][57][58][59][60][61]. Also QWIP's technology demonstrates considerably progress in fabrication of multicolour FPAs [40,44,[62][63][64][65][66].…”

Section: Dual-band Ir Focal Plane Arraysmentioning

confidence: 99%

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Infrared detectors: an overview

Rogalski

2002

Infrared Physics & Technology

681

343

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The paper presents progress in infrared (IR) detector technologies during 200 history of their development. Classification of two types of IR detectors (photon detectors and thermal detectors) is done on the basis of their principle of operation. The overview of IR systems and detectors is presented. Also recent progress in different IR technologies is described. Discussion is focused mainly on current and the most rapidly developing detectors: HgCdTe heterostructure photodiodes, quantum well AlGaAs/GaAs photoresistors, and thermal detectors. The outlook for near-future trends in IR technologies is also presented. Ó

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Section: Dual-band Ir Focal Plane Arraysmentioning

confidence: 99%

“…Recently, Rockwell and Boeing have extended a single-colour DLHJ planar technology to twocolour architecture [61]. A cross-section of a typical backside illuminated pixel is shown in Fig.…”

Section: Dual-band Hgcdte Fpasmentioning

confidence: 99%

Infrared detectors: an overview

Rogalski

2002

Infrared Physics & Technology

681

343

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“…Dual band detectors are grown by MBE on lattice matched CdZnTe wafers (see Fig. 7) [18,14,[19][20][21][22]. Recently, Raytheon Vision Systems (RVS) has developed two-colour, large-format infrared FPAs to support the US Army's third generation FLIR systems.…”

Section: Hgcdtementioning

confidence: 99%

“…The 7 × 7 cm Cross-section views of unit cells for various back-illuminated dual-band HgCdTe detector approaches: (a) bias--selectable n-p-n structure reported by Raytheon [17], (b) simultaneous n-p-n design reported by Raytheon [18], (c) simultaneous p-n-n-p reported by BAE Systems [19], (d) simultaneous n-p-p-p-n design reported by Leti [20], (e) simultaneous structure based on p-on-n junctions reported by Rockwell [21], and (f) simultaneous structure based on n-on-p junctions reported by Leti [22].…”

Section: Hgcdtementioning

confidence: 99%

Infrared Detectors for the Future

Rogalski

2009

Acta Phys. Pol. A

124

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In the paper, fundamental and technological issues associated with the development and exploitation of the most advanced infrared detector technologies are discussed. In this class of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys on silicon, type-II superlattices, uncooled thermal bolometers, and novel uncooled micromechanical cantilever detectors. Despite serious competition from alternative technologies and slower progress than expected, HgCdTe is unlikely to be seriously challenged for high-performance applications, applications requiring multispectral capability and fast response. However, the nonuniformity is a serious problem in the case of LWIR and VLWIR HgCdTe detectors. In this context, it is predicted that type-II superlattice system seems to be an alternative to HgCdTe in long wavelength spectral region. In well established uncooled imaging, VO x microbolometer arrays are clearly the most used technology. In spite of successful commercialization of uncooled microbolometers, the infrared community is still searching for a platform for thermal imagers that combine affordability, convenience of operation, and excellent performance. Recent advances in microelectromechanical systems have led to the development of uncooled IR detectors operating as micromechanical thermal detectors. Between them the most important are biomaterial microcantilevers.

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“…A variation on the original back to back concept was implemented using HgCdTe at Rockwell [112] and Santa Barbara Research Center [113]. Following the successful demonstration of multispectral detectors in LPE-grown HgCdTe devices [113], the MBE and MOCVD techniques have been used for the grown of a variety of multispectral detectors at Raytheon [27,[114][115][116][117], BAE Systems [118], Leti [28,30,[119][120][121], Selex and QinetiQ [29,122,123], DRS, [26,124,125] Teledyne and NVESD [126,127]. For more than a decade a steady progression have been made in a wide variety of pixel size (to as small as 20 µm.…”

Section: Multicolour Detectorsmentioning

confidence: 99%

New material systems for third generation infrared photodetectors

Rogalski¹

2008

Opto-Electronics Review

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Third-generation infrared (IR) systems are being developed nowadays. In the common understanding, these systems provide enhanced capabilities-like larger numbers of pixels, higher frame rates, and better thermal resolution as well as multicolour functionality and other on-chip functions. In this class of detectors, two main competitors, HgCdTe photodiodes and quantum-well photoconductors, have being developed.Recently, two new material systems have been emerged as the candidates for third generation IR detectors, type II InAs/GaInSb strain layer superlattices (SLSs) and quantum dot IR photodetectors (QDIPs).In the paper, issue associated with the development and exploitation of multispectral photodetectors from these new materials is discussed. Discussions is focused on most recently on-going detector technology efforts in fabrication both photodetectors and focal plane arrays (FPAs). The challenges facing multicolour devices concerning complicated device structures, multilayer material growth, and device fabrication are described.

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A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arrays

Cited by 65 publications

References 3 publications

Infrared detectors: an overview

Infrared detectors: an overview

Infrared Detectors for the Future

New material systems for third generation infrared photodetectors

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