A Novel SiC MOSFET With a Fully Depleted P-Base MOS-Channel Diode for Enhanced Third Quadrant Performance

Li, Ping; Ma, Rongyao; Jia, Shen; Jing, Liang; Guo, Jingwei; Lin, Zhi; Hu, Shengdong; Shi, Cong; Tang, Fang

doi:10.1109/ted.2022.3185960

Cited by 8 publications

(2 citation statements)

References 27 publications

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“…[1][2][3][4] A troublesome issue is that in an inverter system, it is essential to anti-parallel a fast freewheeling diode with the SiC MOSFET for loss reduction, because of the bipolar degradation problem 5,6) as well as the high turn-on voltage (∼2.7 V) of the body diode. [7][8][9] However, the resulting increase of extra capacitance and inductance is undesirable. Recently, integrating a diode with the MOSFET in a single chip is a popular and effective method to solve this issue.…”

Section: Introductionmentioning

confidence: 99%

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

Wang

Jia

Zhou

et al. 2023

Jpn. J. Appl. Phys.

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In this paper, a novel SiC trench-gate MOSFET with integrated heterojunction diode (HD-TG-MOS) is proposed and studied according to TCAD simulations. The n-type polysilicon/n–type SiC HD is introduced into the groove by the direct contact between the polysilicon and semiconductor. As a result, significant improvements of device performance in the first and third quadrants are observed as compared to the conventional SiC trench-gate MOSFET (C-TG-MOS). Better yet, aided by the extremely low barrier height across the heterojunction, the knee voltage reduces to only 0.5 V with comparison of that of ~2.7 V for the body diode, when used for reverse freewheeling. These promotions make SiC HD-TG-MOS more advantageous for high-frequency power conversion applications. In addition, another cell architecture variant adopting a similar concept is presented, and the according process implementation is addressed as well from viewpoint of manufacture.

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Section: Introductionmentioning

confidence: 99%

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

Wang

Jia

Zhou

et al. 2023

Jpn. J. Appl. Phys.

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“…4H-SiC MOSFETs are an attractive power semiconductor device in electronic systems for its high power rating, fast switching speed, and low drive power consumption [1][2][3][4][5]. Compared to SiC planar MOSFETs, SiC trench MOSFETs are more popular in the industry for their better tradeoff between on-resistance and breakdown voltage [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit

Zhang,

Luo,

et al. 2023

Phys. Scr.

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A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device. The gate-to-drain capacitance (Cgd) and gate-to-drain charge (Qgd) of the MSGT-MOSFET are significantly reduced in comparison with the double trench MOSFET (DT-MOSFET) and the conventional SGT MOSFET (CSGT-MOSFET), due to the reduction of the overlapping area of the split gate (SG) structure and drift region. Therefore, the obtained high frequency figure of merit (HF-FOM) defined as [Ron×Cgd] reduced by 23.9% compared with DT-MOSFET and CSGT-MOSFET. And the HF-FOM [Ron×Qgd] for the MSGT-MOSFET significantly decreased by 71% and 50%, respectively, compared to that of the DT-MOSFET and CSGT-MOSFET. Furthermore, the switching loss is also simulated and calculated. And the total switching loss of the proposed MSGT-MOSFET realizes 42.9% and 21.7% reduction in comparison with the DT-MOSFET and CSGT-MOSFET. The overall enhanced performances suggest that the MSGT-MOSFET is an excellent choice for high frequency power electronic applications.

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A novel 4H–SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA

Wu,

Yang,

Yang

et al. 2024

Microelectronics Journal

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A Novel SiC MOSFET With a Fully Depleted P-Base MOS-Channel Diode for Enhanced Third Quadrant Performance

Cited by 8 publications

References 27 publications

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance

A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit

A novel 4H–SiC IGBT with double gate PMOS for improving the switch controllability and FBSOA

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