A novel 4H-SiC multiple stepped SGT MOSFET with improved high frequency figure of merit
Jingping Zhang,
Houcai Luo,
Huan Wu
et al.
Abstract:A novel 4H-SiC Multiple Stepped SGT MOSFET (MSGT-MOSFET) is presented and investigated utilizing TCAD simulations in this paper. We have quantitatively studied the characteristics of the device through simulation modeling and physical model calculations, and comparatively analyzed the performance and application prospects of this novel device. The gate-to-drain capacitance (Cgd) and gate-to-drain charge (Qgd) of the MSGT-MOSFET are significantly reduced in comparison with the double trench MOSFET (DT-MOSFET) a… Show more
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