A Novel Setup for In Situ Monitoring of Thermomechanically Cycled Thin Film Metallizations

Moser, Sebastian J.; Zernatto, Gerald; Kleinbichler, Manuel; Nelhiebel, Michael; Zechner, Johannes; Cordill, Megan J.; Pippan, Reinhard

doi:10.1007/s11837-019-03695-2

Cited by 11 publications

(5 citation statements)

References 19 publications

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“…The samples used within this work are microelectronic test chips that are referred to as poly-heaters. A detailed description of their inner architecture and of the experimental setup used for actuating them can be found elsewhere [51]. Poly-heaters are provided with integrated active heating (utilizing an electrically resistive, polycrystalline silicon layer) and are specifically designed for studying thermo-mechanical fatigue of metallizations.…”

Section: Device Under Testmentioning

confidence: 99%

“…For later degradation void analyses (Section 4) two poly-heater specimens have undergone 1000 heat cycles between 100 • C and 400 • C, with a heating duration of 200 µs and a repetition frequency of 1 Hz. These temperatures refer to the ones measured using the poly-heaters' integrated temperature sensor [51], which is located below the central Cu plate at a distance of 245 µm from its edge. For later degradation void analyses (Section 4) two poly-heater specimens have undergone 1000 heat cycles between 100 °C and 400 °C, with a heating duration of 200 µs and a repetition frequency of 1 Hz.…”

Section: Device Under Testmentioning

confidence: 99%

“…For later degradation void analyses (Section 4) two poly-heater specimens have undergone 1000 heat cycles between 100 °C and 400 °C, with a heating duration of 200 µs and a repetition frequency of 1 Hz. These temperatures refer to the ones measured using the poly-heaters' integrated temperature sensor [51], which is located below the central Cu plate at a distance of 245 µm from its edge.…”

Section: Device Under Testmentioning

confidence: 99%

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Electropolishing—A Practical Method for Accessing Voids in Metal Films for Analyses

et al. 2021

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In many applications, voids in metals are observed as early degradation features caused by fatigue. In this publication, electropolishing is presented in the context of a novel sample preparation method that is capable of accessing voids in the interior of metal thin films along their lateral direction by material removal. When performed at optimized process parameters, material removal can be well controlled and the surface becomes smooth at the micro scale, resulting in the voids being well distinguishable from the background in scanning electron microscopy images. Compared to conventional cross-sectional sample preparation (embedded mechanical cross-section or focused ion beam), the accessed surface is not constrained by the thickness of the investigated film and laterally resolved void analyses are possible. For demonstrational purposes of this method, the distribution of degradation voids along the metallization of thermo-mechanically stressed microelectronic chips has been quantified.

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Section: Device Under Testmentioning

confidence: 99%

Section: Device Under Testmentioning

confidence: 99%

Section: Device Under Testmentioning

confidence: 99%

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Electropolishing—A Practical Method for Accessing Voids in Metal Films for Analyses

et al. 2021

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“…Functional material properties that are observable at the macroscale are governed by the underlying microstructure and, possibly, crack pattern induced for example due to mechanical (Glushko and Cordill 2016) or thermo-mechanical loads (Moser et al 2019). Extending classic phenomenological material models, distinct features at the microscale are resolved in computational multiscale formulations.…”

Section: Introductionmentioning

confidence: 99%

Electrical and mechanical behaviour of metal thin films with deformation-induced cracks predicted by computational homogenisation

et al. 2021

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Motivated by advances in flexible electronic technologies and by the endeavour to develop non-destructive testing methods, this article analyses the capability of computational multiscale formulations to predict the influence of microscale cracks on effective macroscopic electrical and mechanical material properties. To this end, thin metal films under mechanical load are experimentally analysed by using in-situ confocal laser scanning microscopy (CLSM) and in-situ four point probe resistance measurements. Image processing techniques are then used to generate representative volume elements from the laser intensity images. These discrete representations of the crack pattern at the microscale serve as the basis for the calculation of effective macroscopic electrical conductivity and mechanical stiffness tensors by means of computational homogenisation approaches. A comparison of simulation results with experimental electrical resistance measurements and a detailed study of fundamental numerical properties demonstrates the applicability of the proposed approach. In particular, the (numerical) errors that are induced by the representative volume element size and by the finite element discretisation are studied, and the influence of the filter that is used in the generation process of the representative volume element is analysed.

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“…On a number of occasions technologists try to apply the methods of correcting mechanical stresses by additional oxidizing the reverse side of silicon plates (Lee et al, 2017;Nguyen et al, 2018;Yao et al, 2019). Nevertheless, in some cases partial destruction of joint integrity (Makara It is known (Skvortsov et al, 2006;Skvortsov et al, 2016;Moser et al, 2019) that passage of an electric pulse through metallization track may result in processes of (i) contact melting (as the eutectic melting temperature T eu achieves 850 K at the Al-Si interface) and (ii) aluminum film melting (as the aluminum melting temperature T Al achieves 934 K). It was established by the authors in their earlier works (Skvortsov et al, 2006;Skvortsov et al, 2016) that development of processes of contact melting and electro-degradation for the Al-Si systems can appear when heating thin-film systems by an electric pulse of energy up to 250 J and interval duration of 50…1000 s.…”

Section: Introductionmentioning

confidence: 99%

Deflected State of Semiconductor Near-Contact Region at Electrodegradation of Metallization Track on Its Surface

Скворцов¹,

Koryachko²,

Voloshinov³

2019

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It is well known that a nonhomogeneous state of stress occurs in compounds of dissimilar materials upon heating. Uon the assessment of the strength of the joints, it is necessary to factor in the physical specifications of the soldered elements, the geometric dimensions and temperature conditions of their operation. The purpose of the research was to perform the stress-strain state analysis of the contact zone of a semiconductor upon electrodegradation of a metallization track on its surface. Thin-film metal-semiconductor structures were researched. As substrates, it was used phosphorus-doped silicon single-crystal wafers oriented in the (111) and (100) directions, with a resistivity in the range p = 1 ... 0.01 Ω.cm, and a 30 ... 50 μm n-epitaxial layer was deposited on a part of the wafers. As a conductive metal film, aluminum 1 ... 2 μm thick was used. The test structure was formed by optical photolithography. The oscillograms of the U(t) inclusion in the process of passage of the current pulse were taken by the corresponding probes from potential sites and recorded by a digital storage oscilloscope. An estimation procedure for the semiconductor stressed region at local surface heating of a metallized surface area with electric pulse was given. The calculated size of deformed silicon substrate region was compared with the experimental one under passage of square electric pulses. It was estimated the deflected region that depends on duration and amplitude of electric pulse. A considerable nonuniformity of the metallization track after electric pulse passage was fixed experimentally.

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A Novel Setup for In Situ Monitoring of Thermomechanically Cycled Thin Film Metallizations

Cited by 11 publications

References 19 publications

Electropolishing—A Practical Method for Accessing Voids in Metal Films for Analyses

Electropolishing—A Practical Method for Accessing Voids in Metal Films for Analyses

Electrical and mechanical behaviour of metal thin films with deformation-induced cracks predicted by computational homogenisation

Deflected State of Semiconductor Near-Contact Region at Electrodegradation of Metallization Track on Its Surface

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