A novel self-catalytic route to zinc stannate nanowires and cathodoluminescence and electrical transport properties of a single nanowire

Lei, Ming; Sheng, Yujie; Wan, Long; Bi, Ke; Huang, Kai; Jia, Renxu; Li, Jun; Wang, Yangang

doi:10.1016/j.jallcom.2015.10.085

Cited by 9 publications

(12 citation statements)

References 52 publications

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“…However, it should be noted that emission similar to our observed red emission peak has been reported by numerous groups 18,[42][43][44] . While several possible explanations have been suggested, such as Zn or Sn vacancies, lack of Zn/Sn stoichiometry, or Oxygen vacancies, the origin of this emission is still unclear.…”

Section: Resultssupporting

confidence: 91%

“…In addition, due to the n-type behavior of ZTO nanowires 14,44 , the electron trap states will be mostly filled with electrons, even in equilibrium, and as such the transition from the CB to the electron traps states does not show up in our measurements. Since our measurements do show a slight delay in the blue emission, it follows that this must be due to hole capture into the shallower hole trap state associated with the blue transition, as shown in the figure.…”

Section: Resultsmentioning

confidence: 88%

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Steady state and time resolved optical characterization studies of Zn2SnO4 nanowires for solar cell applications

et al. 2016

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ABSTRACT:Nanowires are a promising option for sensitized solar cells, sensors, and display technology. Most of the work thus far has focused on binary oxides for these nanowires, but ternary oxides have advantages in additional control of optical and electronic properties. Here we report on the diffuse reflectance, Low Temperature (LT) and Room Temperature (RT) Photoluminescence (PL), PL Excitation (PLE) spectrum, and Time Resolved PL (TRPL) of Zinc Tin Oxide (ZTO) nanowires grown by Chemical Vapor Deposition. The PL from the ZTO nanowires does not exhibit any band gap or near gap emission, and diffuse reflectance measurement confirms that these ZTO nanowires have a direct forbidden transition.The broad PL spectrum reveals two Gaussian peaks centered at 1.86 eV (red) and 2.81 eV (blue), representing two distinct defect states or complexes. The PL spectra was further studied by Time Resolved Emission Spectrum (TRES) and intensity dependent PL and TRPL. The time resolved measurements show complex non-exponential decays at all wavelengths, indicative of defect to defect transitions, and the red emissive states decay much slower than the blue emissive states. The effects of annealing in air and vacuum are studied to investigate the origin of the defect states in the nanowires showing that the blue 2 states are related to oxygen vacancies. We propose an energy band model for the nanowires containing defect states within the band gap and the associated transitions between these states that are consistent with our measurements.

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Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 88%

Steady state and time resolved optical characterization studies of Zn2SnO4 nanowires for solar cell applications

et al. 2016

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“…16 Its band gap was reported as being 3.9 eV, higher than for Zn 2 SnO 4 . 17,18 These ZTO nanostructures can be synthesized by vapor phase processes as chemical vapor deposition (CVD) 19 and thermal evaporation, 6 which present high efficiency. However, these are cumbersome and expensive techniques, which demand high temperatures (>700 °C).…”

Section: Introductionmentioning

confidence: 99%

Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters

Rovisco

Branquinho

Martins

et al. 2018

ACS Appl. Nano Mater.

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Semiconductor nanowires are mostly processed by complex, expensive, and high temperature methods. In this work, with the intent of developing zinc tin oxide nanowires (ZTO NWs) by low-cost and low-complexity processes, we show a detailed study on the influence of chemical parameters in the hydrothermal synthesis of ZTO nanostructures at temperatures of only 200 °C. Two different zinc precursors, the ratio between zinc and tin precursors, and the concentration of the surfactant agent and of the mineralizer were studied. The type and the crystallinity of the nanostructures were found to be highly dependent on the used precursors and on the concentration of each reagent. Conditions for obtaining different ZTO nanostructures were achieved, namely, Zn 2 SnO 4 nanoparticles and ZnSnO 3 nanowires with length ∼600 nm, with the latter being reported for the first time ever by hydrothermal methods without the use of seed layers. Optical and electrical properties were analyzed, obtaining band gaps of 3.60 and 3.46 eV for ZnSnO 3 and Zn 2 SnO 4 , respectively, and a resistivity of 1.42 kΩ·cm for single ZnSnO 3 nanowires, measured using nanomanipulators after localized deposition of Pt electrodes by e-beam assisted gas decomposition. The low-temperature hydrothermal methods explored here proved to be a low-cost, reproducible, and highly flexible route to obtain multicomponent oxide nanostructures, particularly ZTO NWs. The diversity of the synthesized ZTO structures has potential application in next-generation nanoscale devices such as field effect nanotransistors, nanogenerators, resistive switching memories, gas sensors, and photocatalysis.

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“…Such NWs can grow to be several tens of nanometers in diameter and up to several tens of micrometers in length. Not only binary metal oxide NWs such as SnO 2 , ZnO, and WO 3 [13,14,19], but also ternary metal oxide NWs such as Zn 2 SnO 4 [20] and ITO (indium tin oxide) [21], are prepared by VLS mechanism. The thermal oxidation process of metal foil can also be used to prepare single crystalline metal oxide NWs.…”

Section: Metal Oxide Nanowiresmentioning

confidence: 99%

Design of Highly Selective Gas Sensors via Physicochemical Modification of Oxide Nanowires: Overview

Woo

Lee

2016

Sensors

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Strategies for the enhancement of gas sensing properties, and specifically the improvement of gas selectivity of metal oxide semiconductor nanowire (NW) networks grown by chemical vapor deposition and thermal evaporation, are reviewed. Highly crystalline NWs grown by vapor-phase routes have various advantages, and thus have been applied in the field of gas sensors over the years. In particular, n-type NWs such as SnO2, ZnO, and In2O3 are widely studied because of their simple synthetic preparation and high gas response. However, due to their usually high responses to C2H5OH and NO2, the selective detection of other harmful and toxic gases using oxide NWs remains a challenging issue. Various strategies—such as doping/loading of noble metals, decorating/doping of catalytic metal oxides, and the formation of core–shell structures—have been explored to enhance gas selectivity and sensitivity, and are discussed herein. Additional methods such as the transformation of n-type into p-type NWs and the formation of catalyst-doped hierarchical structures by branch growth have also proven to be promising for the enhancement of gas selectivity. Accordingly, the physicochemical modification of oxide NWs via various methods provides new strategies to achieve the selective detection of a specific gas, and after further investigations, this approach could pave a new way in the field of NW-based semiconductor-type gas sensors.

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A novel self-catalytic route to zinc stannate nanowires and cathodoluminescence and electrical transport properties of a single nanowire

Cited by 9 publications

References 52 publications

Steady state and time resolved optical characterization studies of Zn2SnO4 nanowires for solar cell applications

Steady state and time resolved optical characterization studies of Zn2SnO4 nanowires for solar cell applications

Seed-Layer Free Zinc Tin Oxide Tailored Nanostructures for Nanoelectronic Applications: Effect of Chemical Parameters

Design of Highly Selective Gas Sensors via Physicochemical Modification of Oxide Nanowires: Overview

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