1985 International Electron Devices Meeting 1985
DOI: 10.1109/iedm.1985.191057
|View full text |Cite
|
Sign up to set email alerts
|

A novel self-aligned AlGaAs laser with bent active layer grown by MOCVD

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

1988
1988
1994
1994

Publication Types

Select...
2
1

Relationship

1
2

Authors

Journals

citations
Cited by 3 publications
(2 citation statements)
references
References 0 publications
0
2
0
Order By: Relevance
“…This figure suggests that the T laser might be one of the most promising laser at present stage as a high power light source to erase and write optical disk memory Another structure of a single stripe diode laser is an SBA(self-aligned bent active layer) schematically shown in Fig. 6 [5,6]. When cavity length and active region (2) Enlarging spot-size a.…”
Section: High Power Diode Lasers Developedmentioning
confidence: 96%
“…This figure suggests that the T laser might be one of the most promising laser at present stage as a high power light source to erase and write optical disk memory Another structure of a single stripe diode laser is an SBA(self-aligned bent active layer) schematically shown in Fig. 6 [5,6]. When cavity length and active region (2) Enlarging spot-size a.…”
Section: High Power Diode Lasers Developedmentioning
confidence: 96%
“…4W under pulsed condition were experimentally obtáined (9,1O). In this paper, we describe our results to applying the idea to simple planar-stripeS lasers with stripe width of 15Om, which has gain-guiding mechanism on the contrary to SBA lasers (11,12). At the same time, we introduce a concept invented in CO2 laser field(13) into the diode laser field to reduce fringes.…”
Section: Introductionmentioning
confidence: 93%