ARTICLE
This journal isWe introduce an easily acceptable method to produce free-standing Bi-Sb-Te films from Sb 2 Te 3 /Bi 2 Te 3 multilayer films based on solid-state reactions. When sputter-deposited Sb 2 Te 3 /Bi 2 Te 3 multilayer films were annealed at 400 °C under a N 2 gas atmosphere, they were transformed into single layers composed of Bi-Sb-Te films. At the same time, they were spontaneously stripped on a large scale from the substrates (1 cm × 1 cm) without chemical etching. As-fabricated free-standing Bi-Sb-Te films were very flexible, with a thickness of about 400 nm. The findings confirmed that the formation of voids and the strong flow rate of ambient gas play important roles in fabricating free-standing Bi-Sb-Te films during the thermal annealing process. The temperature-dependent crystallization behaviors of each Sb 2 Te 3 and Bi 2 Te 3 film were also investigated to understand the mechanism. Moreover, the thermoelectric properties of free-standing Bi-Sb-Te films were examined with different thickness of films. We believe that this method can contribute to the development of low-dimensional nanostructures that can be useful in various applications such as energy conversion, energy storage and wearable electronics. increased from 68.3 µW / K 2 m to 493.0 µW / K 2 m at room temperature. Although we need to optimize the fabrication process for enhancement of thermoelectric properties, this facile method shows potential for development of free-standing films in thermoelectric applications.