2011
DOI: 10.1088/0957-4484/22/24/245602
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A novel route to large-scale and robust free-standing TiO2nanotube membranes based on N2gas blowing combined with methanol wetting

Abstract: We present a novel and straightforward approach to fabricate large-scale and robust free-standing TiO(2) nanotube (TNT) membranes. Simply by blowing N(2) gas onto as-anodized TNTs that are wetted with methanol, free-standing TNT membranes are produced. The approach also provides homogeneous and honeycomb-like Ti substrates after the detachment of TNT membranes. Through the second anodization of the honeycomb-like Ti substrates following the N(2) blowing, TNT membranes comprising hexagonally close-packed and re… Show more

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Cited by 25 publications
(16 citation statements)
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References 39 publications
(36 reference statements)
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“…[13][14][15]29 The TiO 2 nanotube arrays were detached from the Ti metal substrate from which they "grew" during anodization by exploiting the surface tension that occurs when they are rinsed with a large surface tension liquid and air dried as described elsewhere. 10,18,20,30,31 Figure 2 contains scanning electron microscope (SEM) images and a photo of the open and closed sides of some of the "free-standing" nanotube arrays fabricated.…”
Section: A Sample Preparationmentioning
confidence: 99%
“…[13][14][15]29 The TiO 2 nanotube arrays were detached from the Ti metal substrate from which they "grew" during anodization by exploiting the surface tension that occurs when they are rinsed with a large surface tension liquid and air dried as described elsewhere. 10,18,20,30,31 Figure 2 contains scanning electron microscope (SEM) images and a photo of the open and closed sides of some of the "free-standing" nanotube arrays fabricated.…”
Section: A Sample Preparationmentioning
confidence: 99%
“…Electrochemical deposition is the most simple, efficient, versatile, and cost effective technique. It is well known that anodization of metals is always associated with an insulting barrier layer between the metal substrate and metal oxide film [21]. Thickness of the barrier layer mainly depends upon the anodizing voltage with a growth rate of 1 nm/V [22].…”
Section: Introductionmentioning
confidence: 99%
“…They were much more intense than the other peaks. 34 When the annealing temperature was increased, voids were formed, mainly in the Sb 2 Te 3 layer due to solid-state reactions and the unique crystallization behavior of the material. In the case of Sb 2 Te 3 films, however, no preferred growth of the crystal plane (015) was detected, similar to Bi 2 Te 3 films and the crystallization was more extensive compared with an asdeposited film.…”
Section: Resultsmentioning
confidence: 99%