A novel route to a polycrystalline silicon thin-film solar cell

Fuhs, W.; Gall, S.; Rau, B.; Schmidt, M.; Schneider, Jens

doi:10.1016/j.solener.2004.05.002

Cited by 71 publications

(46 citation statements)

References 16 publications

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“…Formation of a polySi seed layer and subsequent epitaxial thickening at low temperatures is an interesting approach for the formation of solar cells [1]. Low-temperature epitaxy is facilitated by (1 0 0) crystal orientation [2,3].…”

Section: Introductionmentioning

confidence: 99%

A simple model explaining the preferential (100) orientation of silicon thin films made by aluminum-induced layer exchange

Schneider

Sarikov

Klein

et al. 2006

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

A simple model explaining the preferential (100) orientation of silicon thin films made by aluminum-induced layer exchange

Schneider

Sarikov

Klein

et al. 2006

Journal of Crystal Growth

Self Cite

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“…7 The MIC of a-Si was already observed under different circumstances demonstrating that the crystallization temperature can be reduced from $700 C down to near 200 C, depending on experimental conditions like 8,9 the nature and amount of metal, the type of the substrate, and the annealing details, for example. Moreover, within the a-Si-metal systems investigated so far, a-SiAl was applied with success in the fabrication of solar cells [10][11][12] with efficiencies ranging from $3-8.5% (Ref. 13) to 11%.…”

Section: Introductionmentioning

confidence: 99%

On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon

Zanatta

Kordesch

2014

Journal of Applied Physics

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Amorphous (a-)Si-based materials always attracted attention of the scientific community, especially after their use in commercial devices like solar cells and thin film transistors in the 1980s. In addition to their technological importance, the study of a-Si-based materials also present some interesting theoretical-practical challenges. Their crystallization as induced by metal species is one example, which is expected to influence the development of electronic-photovoltaic devices. In fact, the amorphous-to-crystalline transformation of the a-SiAl system has been successfully applied to produce solar cells suggesting that further improvements can be achieved. Stimulated by these facts, this work presents a comprehensive study of the a-SiAl system. The samples, with Al contents in the $0À15 at. % range, were made in the form of thin films and were characterized by different spectroscopic techniques. The experimental results indicated that: (a) increasing amounts of Al changed both the atomic structure and the optical properties of the samples; (b) thermal annealing induced the crystallization of the samples at temperatures that depend on the Al concentration; and (c) the crystallization process was also influenced by the annealing duration and the structural disorder of the samples. All of these aspects were addressed in view of the existing models of the a-Si crystallization, which were also discussed to some extent. Finally, the ensemble of experimental results suggest an alternative method to produce cost-effective crystalline Si films with tunable structural-optical properties.

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“…So far the highest reported stabilized efficiency is 10.1% for a single junction a-Si:H cell [2][3][4][5]. For this reason researchers have investigated the manufacturing of solar cells based on thin layers of crystalline silicon (c-Si) [6,7]. This material has a much lower defect density and therefore a reduced recombination rate.…”

Section: Introductionmentioning

confidence: 99%

Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

et al. 2014

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A novel route to a polycrystalline silicon thin-film solar cell

Cited by 71 publications

References 16 publications

A simple model explaining the preferential (100) orientation of silicon thin films made by aluminum-induced layer exchange

A simple model explaining the preferential (100) orientation of silicon thin films made by aluminum-induced layer exchange

On the structural-optical properties of Al-containing amorphous Si thin films and the metal-induced crystallization phenomenon

Study of the effect of boron doping on the solid phase crystallisation of hydrogenated amorphous silicon films

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