A Novel Route for Fabrication of Stable CsPbI₃ Perovskite Thin Film by Thermal Evaporation

Abstract

Perovskite thin films hold promise as a potential candidate for high efficiency solar cells. In recent years, a wealth of results has been published on CsPbI3 thin films. However, most of the literature reports that CsPbI3 perovskite films are prone to aging where black colored CsPbI3 films with cubic lattice change to yellow colored films with orthorhombic lattice upon exposure to ambient conditions. This poor stability presents itself as a major challenge in utilization of CsPbI3 for device applications. This manuscript presents an alternate route for fabricating stable CsPbI3 thin films using thermal evaporation. Experimentally, our samples were found to be stable, visually and structurally, over a period of six months. Even annealing of the samples did not induce structural changes.

Defect Passivation via Additive Engineering to Improve Photodetection Performance in CsPbI2Br Perovskite Photodetectors

“…1,2 Among them, solution-processable all-inorganic lead halide perovskites CsPbX 3 (X = Cl, Br, I) have been regarded as promising candidates for nextgeneration low-cost photodetectors due to their high absorption coefficient, long carrier diffusion length, and tunable optical band gap. 3 Perovskite photodetector parameters, such as noise current, response time, specific detectivity (D*), and linear dynamic range (LDR), are closely related to the crystallization of perovskite films. 4,5 Due to the difficulty of controlling crystallization kinetics and ion migration, the formation of polycrystalline CsPbX 3 films is inevitably accompanied by a large number of defects, such as vacancies, antisites, and so forth.…”

“…With the rapid development of driverless technology, remote sensing, industrial automatic control, and all-weather surveillance, novel semiconductor photodetectors (PDs) are currently under intensive investigations to achieve superior photodetection performance. Various types of semiconductor materials have been applied as light harvesters for PDs, such as III–V semiconductors, Si, ZnO, graphene, conjugated polymers, and so on. , Among them, solution-processable all-inorganic lead halide perovskites CsPbX 3 (X = Cl, Br, I) have been regarded as promising candidates for next-generation low-cost photodetectors due to their high absorption coefficient, long carrier diffusion length, and tunable optical band gap . Perovskite photodetector parameters, such as noise current, response time, specific detectivity ( D *), and linear dynamic range (LDR), are closely related to the crystallization of perovskite films. , …”