2020
DOI: 10.1016/j.ijepes.2019.105629
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A novel protection scheme against turn-to-turn fault of MCSR based on equivalent magnetizing inductance

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Cited by 4 publications
(2 citation statements)
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“…Therefore, the topology of the zero-sequence equivalent circuit and the distribution of zero-sequence current are shown in Figure 13. This figure shows that due to the parallel-short-circuited connection of auxiliary windings, the current 3 ̇I0 flows almost FIGURE 13 Zero-sequence equivalent circuit under the condition of inner-turn fault of auxiliary winding.…”
Section: Inner-turn Fault Of Auxiliary Windingmentioning
confidence: 97%
See 1 more Smart Citation
“…Therefore, the topology of the zero-sequence equivalent circuit and the distribution of zero-sequence current are shown in Figure 13. This figure shows that due to the parallel-short-circuited connection of auxiliary windings, the current 3 ̇I0 flows almost FIGURE 13 Zero-sequence equivalent circuit under the condition of inner-turn fault of auxiliary winding.…”
Section: Inner-turn Fault Of Auxiliary Windingmentioning
confidence: 97%
“…However, the grid-side measurements of fault characteristics are inherently limited by the weak coupling within SRAW, leading to a lack of sensitivity in detecting inner-turn faults. To address this challenge, [13] has proposed a protection scheme based on the equivalent magnetizing inductance (EMI). Nonetheless, the change in EMI after an inner-turn fault occurs is relatively small and insignificant due to the numerous air gaps in SRAW's core, which can lead to potential risks of maloperation.…”
Section: Introductionmentioning
confidence: 99%