A novel nondestructive testing method for amorphous Si–Sn–O films

Liu, Xianzhe; Cai, Wei; Chen, Jianqiu; Fang, Zhiqiang; Ning, Honglong; Hu, Shiben; Tao, Ruiqiang; Zeng, Yong; Zheng, Zeke; Yao, Rihui; Xu, Miao; Wang, Lei; Lan, Linfeng; Peng, Junbiao

doi:10.1088/0022-3727/49/50/505102

Cited by 20 publications

(24 citation statements)

References 22 publications

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“…Compared with indium gallium zinc oxide thin film, a‐STO has the advantages of controllable composition, no toxicity, low raw material cost, etc. so a‐STO has a broad application prospect …”

Section: Introductionmentioning

confidence: 99%

“…so a-STO has a broad application prospect. [8][9][10] Usually, good quality of oxide semiconductors was obtained by thermal annealing processes. Conventional thermal annealing requires long-term heat treatment at high temperatures, which may causes the surface of the material be contaminated, and the electrical properties of the substrate material are lowered by heating for a long time, 11 and the long-term heat accumulation makes the thermal annealing technique unsuitable for large-area panel process and flexible panel process.…”

Section: Introductionmentioning

confidence: 99%

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Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

et al. 2019

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In this paper, the effect of deep ultraviolet (UV) laser on physical and electrical properties of amorphous Silicon-doped tin oxide (amorphous Si-Sn-O, a-STO) thin films were studied. Surface morphology, thickness, crystallinity, and optical band gap of a-STO thin films treated by laser were investigated. Results showed that the decrease of thickness and surface roughness of a-STO thin films after deep UV laser treatment, and the films maintained an amorphous structure, which implied that the quality of a-STO thin films were improved.The peak position of oxygen vacancy binding energy became lower; this is caused by an increase in oxygen vacancies resulting in a decrease in coordination number. And the oxygen vacancy content of the a-STO thin films was increased after deep UV laser treatment. In addition, the optical band gap of a-STO films was broaden after the deep UV laser treatment. It exploits a new application of deep UV laser in oxide semiconductor.KEYWORDS amorphous STO thin film, deep ultraviolet laser, optical band gap, oxygen vacancy

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

et al. 2019

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“…Tin oxide (SnO 2 ) is regarded as a promising candidate for the channel layer of TFT because of its cheap and nontoxicity . However, poor electrical properties are obtained in SnO 2 TFTs due to excess carrier concentration and crystallization.…”

Section: Introductionmentioning

confidence: 99%

Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors

et al. 2019

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The structural, optical, and electrical properties of Si‐doped SnO2 (STO) films were investigated in terms of their potential applications for flexible electronic devices. All STO films were amorphous with an optical transmittance of ~90%. The optical band gap was widened as the Si content increased. The Hall mobility and carrier density were improved in the SnO2 with 1 wt% Si film, which was attributed to the formation of donor states. Si (1 wt%) doped SnO2 thin‐film transistor exhibited a good device performance and good stability with a saturation mobility of 6.38 cm2/Vs, a large Ion/Ioff of 1.44 × 107, and a SS value of 0.77 V/decade. The device mobility of a‐STO TFTs at different bending radius maintained still at a high level. These results suggest that a‐STO thin films are promising for fabricating flexible TFTs.

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“…Tin oxide (SnO 2 ) has been regarded as a promising candidate for the channel layer of TFT because of its high optical transmittance, nontoxicity, and low cost . Due to excess carrier concentration and crystallization of SnO 2 , the silicon (Si) element as an excellent carrier suppressor material was incorporated into SnO 2 based on its bond‐dissociation energy with oxygen …”

Section: Introductionmentioning

confidence: 99%

“…6 Due to excess carrier concentration and crystallization of SnO 2 , the silicon (Si) element as an excellent carrier suppressor material was incorporated into SnO 2 based on its bond-dissociation energy with oxygen. [7][8][9][10] In addition, the contact properties at the Source/Drain (S/D) electrode/semiconductor interface is a key factor affecting device performance, which will become more prominent for scale-down device. A large contact resistance would hinder electron transport in the device and conduce to the degradation of device performance.…”

Section: Introductionmentioning

confidence: 99%

A study of contact properties between molybdenum and amorphous silicon tin oxide thin film transistors

Ning

Liu

et al. 2018

J Soc Info Display

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Amorphous silicon tin oxide (a‐STO) semiconductor is of increasing interest for fabricating thin film transistor. The contact properties of Mo source/drain electrode to a‐STO film subjected to different thermal annealing processes was investigated. The formation of molybdenum oxide interlayer between Mo and a‐STO film annealed in air ambient was confirmed by cross‐sectional transmission electron microscopy image, and the interlayer was formed by getting oxygen from a‐STO film in air annealing process. The formation of molybdenum oxide interlayer could provide not only an adhesive layer but also an intermediate barrier layer, and it hindered Mo atoms diffuse into a‐STO film, which would form a good quality of contact interface and facilitate the electron injection from Mo electrode into a‐STO film.

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A novel nondestructive testing method for amorphous Si–Sn–O films

Cited by 20 publications

References 22 publications

Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

Effect of deep UV laser treatment on silicon‐doped Tin oxide thin film

Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors

A study of contact properties between molybdenum and amorphous silicon tin oxide thin film transistors

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