A novel monolithic distributed traveling-wave photodetector with parallel optical feed

Murthy, S.; Jung, Thomas; Chau, T.; Wu, Ming C.; Sivco, Deborah L.; Cho, A.Y.

doi:10.1109/68.849083

Cited by 21 publications

(7 citation statements)

References 10 publications

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“…In contrast to the MSM VMDP we reported previously [14], the p-i-n VMDP does not fail at the maximum linear photocurrent. In fact, our device survives at photocurrent as high as 55 mA.…”

Section: Device Characteristicscontrasting

confidence: 44%

“…By optimizing the photocurrent of the monitoring PD, we can ensure high linear photocurrent in the device. The photocurrent distribution can be made even more uniform by tapering the optical coupling between the waveguide and the photodiodes [5], or by splitting power equally to a parallel array of photodiodes as in the parallel-fed VMDP [14].…”

Section: Device Characteristicsmentioning

confidence: 99%

“…Several approaches have been proposed to increase the maximum linear photocurrent of high-speed PDs, including wave-guide PDs with low confinement factors [4]- [6], traveling-wave photodetectors [7], [8] phototransistors [9], uni-traveling-carrier photodiode [10], and velocity-matched distributed photodetectors (VMDP) [11]- [13], and parallel fed VMDP [14]. Using the VMDP with metal-semiconductor-metal (MSM) PDs, we have previously achieved a saturation photocurrent of 33 mA at 1.55-m wavelength [15].…”

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confidence: 99%

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Velocity-matched distributed photodetectors and balanced photodetectors with p-i-n photodiodes

Islam

Murthy

Itoh

et al. 2001

IEEE Trans. Microwave Theory Techn.

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Abstract-We report on the first demonstration of velocity-matched distributed photodetectors and balanced photodetectors with p-i-n photodetectors. Record-high linear dc photocurrent of 45 mA has been achieved without suffering from thermal damage, thanks to the superior power handling capability of p-i-n photodiodes. A novel fiber alignment technique has been developed to achieve high linear photocurrent. More than 37 dB of common-mode-rejection ratio and 45-dB suppression of laser relative intensity noise over a broad frequency range have been achieved using the distributed balanced photodetectors in an RF fiber-optic link. The frequency response is flat from 1 to 35 GHz.

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“…In contrast to the MSM VMDP we reported previously [14], the p-i-n VMDP does not fail at the maximum linear photocurrent. In fact, our device survives at photocurrent as high as 55 mA.…”

Section: Device Characteristicscontrasting

confidence: 44%

Section: Device Characteristicsmentioning

confidence: 99%

mentioning

confidence: 99%

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Velocity-matched distributed photodetectors and balanced photodetectors with p-i-n photodiodes

Islam

Murthy

Itoh

et al. 2001

IEEE Trans. Microwave Theory Techn.

Self Cite

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“…Figure 3.9 shows DC linearity measurements on two PF-VMDPs employing identical MSM photodiodes but different MMI splitting ratios. The device with the 1 Â 4 MMI saturates at 13.5 mA, while in the 1 Â 8 case, linearity is maintained until device failure at 20.1 mA [28]. The maximum linear photocurrent can be further increased by increasing the splitting ratio and optimizing the MMI excess loss.…”

Section: Parallel Optical Feed Photodetectorsmentioning

confidence: 99%

High‐Power Distributed Photodetectors for RF Photonic Applications

Iezekiel

2009

Microwave Photonics

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Photodetector linearity is of paramount importance in external intensity modulated direct detection (IMDD) analogue fibre-optic links. This realization has created a demand for high bandwidth, high saturation current photodetectors. Additionally, high current photodetectors have the potential to simplify receiver designs by eliminating the need for impedance matched electronic amplifiers. Applications that can benefit from high-performance photodetectors include antenna remoting, fibre-radio and terahertz signal generation by photomixing.The system level benefits of high current photodetectors may be seen by plotting the link RF gain (G RF ), noise figure (NF), and spurious free dynamic range (SFDR) versus photocurrent for a hypothetical external IMDD link. The curves in Figure 3.1 clearly demonstrate the benefits of high current photodetectors. As the photocurrent increases so does the link performance until laser RIN dominates the noise floor. Link performance may be further improved by utilizing balanced detection, in which case laser RIN is suppressed, the shot-noise limited regime is extended, and with increasing photocurrent, G RF , NF and SFDR improve dramatically.Space charge effects and thermal runaway are the primary factors limiting photodetector high power operation [1]. Large photocurrent density in the absorption regions can screen the applied electric field leading to a lowering of the photogenerated carrier velocity and, ultimately, the complete collapse of the applied electric field [2]. Consequently, RF photoresponse decreases and nonlinearities generated by the photodetector start to degrade the system dynamic range. Microwave Photonics: Devices and Applications Edited by Stavros Iezekiel

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“…One detection scheme to overcome this limitation is edge-coupled photodiodes. This scheme has been used to achieve very high-speed metal-semiconductor-metal (MSM) or p-i-n waveguide photodiodes distributed MSM photodetectors, avalanche photodiodes, and traveling-wave photodetectors with high output current [9][10][11][12][13]. The disadvantages of edge-illuminated detectors are complex fabrication and integration along with difficult light coupling.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast and highly efficient resonant-cavity-enhanced photodiodes

2003

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In this talk, we will review our research efforts on resonant cavity enhanced (RCE) high-speed high-efficiency photodiodes (PDs) operating in the 1st and 3rd optical communication windows. Using a microwave compatible planar fabrication process, we have designed and fabricated GaAs and InGaAs based RCE photodiodes. For RCE GaAs Schottky type photodiodes, we have achieved peak quantum efficiencies of 50% and 75% with semi-transparent (Au) and transparent (indium-tin-oxide) Schottky layers respectively. Along with 3-dB bandwidths of 50 and 60 GHz, these devices exhibit bandwidth-efficiency (BWE) products of 25 GHz and 45 GHz respectively. By using a postprocess recess etch, we tuned the resonance wavelength of an RCE InGaAs PD from 1605 to 1558 nm while keeping the peak efficiencies above 60%. The maximum quantum efficiency was 66% at 1572 nm which was in good agreement with our theoretical calculations. The photodiode had a linear response up to 6 mW optical power, where we obtained 5 mA photocurrent at 3 V reverse bias. The photodetector had a temporal response of 16 psec at 7 V bias. After system response deconvolution, the 3-dB bandwidth of the device was 31 GHz, which corresponds to a bandwidth-efficiency product of 20 GHz.

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A novel monolithic distributed traveling-wave photodetector with parallel optical feed

Cited by 21 publications

References 10 publications

Velocity-matched distributed photodetectors and balanced photodetectors with p-i-n photodiodes

Velocity-matched distributed photodetectors and balanced photodetectors with p-i-n photodiodes

High‐Power Distributed Photodetectors for RF Photonic Applications

Ultrafast and highly efficient resonant-cavity-enhanced photodiodes

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