A novel method to produce black silicon for solar cells

Xia, Yang; Liu, Bangwu; Liu, Jie; Shen, Zhonghua; Li, Chaobo

doi:10.1016/j.solener.2011.03.012

Cited by 116 publications

(67 citation statements)

References 16 publications

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“…12,13 However, most of the research involving textured emitters has been limited to emitter doping via diffusion, although a number of studies point out the necessity of a compromise in the bSi dimensions in order to limit emitter recombination. 6,7,[14][15][16][17] In fact, excessive diffusion through the bSi increased surface area causes higher Auger recombination than in planar surfaces. 10,18 This phenomenon has been reported to result in high emitter saturation current (J 0e ) and/or in the poor blue response of nanostructured solar cells that integrate emitter on the front side (for instance, PERC and Al-BSF cells).…”

Section: Introductionmentioning

confidence: 99%

“…10,18 This phenomenon has been reported to result in high emitter saturation current (J 0e ) and/or in the poor blue response of nanostructured solar cells that integrate emitter on the front side (for instance, PERC and Al-BSF cells). 6,10,[14][15][16] This issue can be prevented with the help of case-specific approaches. Oh et al identified the doping ranges at which the Auger mechanism dominates over surface recombination, showing that diffusion parameters should be carefully adapted to bSi structures.…”

Section: Introductionmentioning

confidence: 99%

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Recombination processes in passivated boron-implanted black silicon emitters

Gastrow

Ortega

Alcubilla

et al. 2017

Journal of Applied Physics

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Recombination processes in passivated boron-implanted black silicon emitters In this paper, we study the recombination mechanisms in ion-implanted black silicon (bSi) emitters and discuss their advantages over diffused emitters. In the case of diffusion, the large bSi surface area increases emitter doping and consequently Auger recombination compared to a planar surface. The total doping dose is on the contrary independent of the surface area in implanted emitters, and as a result, we show that ion implantation allows control of emitter doping without compromise in the surface aspect ratio. The possibility to control surface doping via implantation anneal becomes highly advantageous in bSi emitters, where surface passivation becomes critical due to the increased surface area. We extract fundamental surface recombination velocities S n through numerical simulations and obtain the lowest values at the highest anneal temperatures. With these conditions, an excellent emitter saturation current (J 0e ) is obtained in implanted bSi emitters, reaching 20 fA/cm 2 6 5 fA/cm 2 at a sheet resistance of 170 X/sq. Finally, we identify the different regimes of recombination in planar and bSi emitters as a function of implantation anneal temperature. Based on experimental data and numerical simulations, we show that surface recombination can be reduced to a negligible contribution in implanted bSi emitters, which explains the low J 0e obtained. Published by AIP Publishing. [http://dx

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Recombination processes in passivated boron-implanted black silicon emitters

Gastrow

Ortega

Alcubilla

et al. 2017

Journal of Applied Physics

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“…It is a highly Si-based absorbent without anti-reflection coatings with optimal electrical and optical properties. To manufacture this structure, many methods have been developed [1][2][3][4][5]. Improvement of the properties of porous silicon can be accomplished by passivation mechanism.…”

Section: Introductionmentioning

confidence: 99%

Morphology and FT IR spectra of porous silicon

Kopáni

Mikula

Kosnáč

et al. 2017

Journal of Electrical Engineering

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The morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHy complexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHy and SiFxHy complexes in the layer.K e y w o r d s: porous silicon, nanoparticles, anodic etching, morphology

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“…This is a trade-off between those two issues. Due to its high efficiency of energy convert, black silicon solar cells have been widely studied in the photovoltaic field [7][8][9]. However, there are few papers focus on model of black silicon solar cell .…”

Section: Introductionmentioning

confidence: 99%

Black Silicon Solar Cells Modeling and Model Parameters Estimation

Li¹,

Kang²,

Huang³

et al. 2017

Proceedings of the 2016 International Forum on Mechanical, Control and Automation (IFMCA 2016)

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Abstract. For the purpose of predict the electrical characteristics of black silicon solar cells, a simple lumped-parameter equivalent circuit model is proposed. This model is in the form of electrical equivalent circuit which contains one diode, one current source and two resistances. The model contains linear and nonlinear components. A method based on some simplifications and approximation to the nonlinear function has been proposed to estimate the model parameters. To verify the model and the method, two kinds of black silicon solar cells were used to measure the I-V curves and P-V curves at various irradiance conditions. Simulations and experiments have been conducted to confirm the operation of the proposed model and estimation method.

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A novel method to produce black silicon for solar cells

Cited by 116 publications

References 16 publications

Recombination processes in passivated boron-implanted black silicon emitters

Recombination processes in passivated boron-implanted black silicon emitters

Morphology and FT IR spectra of porous silicon

Black Silicon Solar Cells Modeling and Model Parameters Estimation

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