A novel high-voltage sustaining structure with buried oppositely doped regions

Chen, Xing Bi; Wang, Xin; Sin, J.K.O.

doi:10.1109/16.842974

Cited by 48 publications

(16 citation statements)

References 7 publications

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“…When reverse voltage is increased, the electron and hole in the drift region and FJ were extracted by anode and cathode, whereas the immovable positive charge and negative charges remain at the instant of break-down. In order to simplify the calculation, the electric field in the new structure is attributed to different types of charges with superposition concept, [8] the distribution in the middle of the junction is much larger than other position as shown in Fig. 4, which is called as critical path.…”

Section: Reverse Electric Field Distributionmentioning

confidence: 99%

“…It is a hope to overcome these issues in the new structure, and consider the feasibility of the flow process, the floating junction (FJ) [7,8] structure with one floating junction layer used and optimized in our paper. [9] But the realization of high breakdown voltage becomes increasingly difficult due to the total compensation charge limited by one floating junction layer.…”

Section: Introductionmentioning

confidence: 99%

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Modeling of 4H—SiC multi-floating-junction Schottky barrier diode

Pu¹,

Lin²,

Chen³

et al. 2010

Chinese Phys. B

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This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H-SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ•cm 2 and breakdown voltage increases 422 V with an additional floating junction for the given structure.

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Section: Reverse Electric Field Distributionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Modeling of 4H—SiC multi-floating-junction Schottky barrier diode

Pu¹,

Lin²,

Chen³

et al. 2010

Chinese Phys. B

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show abstract

“…It is hoped to overcome these issues in the new structure, and to consider the feasibility of the process flow, the floating junction (FJ) [6,7] structure is used in this paper. Employing a two-dimensional physically based device simulator MEDICI 4.0 [8] , we have simulated the performance of FJ-SBD based on 4H-SiC.…”

Section: Introductionmentioning

confidence: 99%

Optimized design of 4H-SiC floating junction power Schottky barrier diodes

Lin

Chen

et al. 2009

J. Semicond.

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SiC floating junction Schottky barrier diodes were simulated with software MEDICI 4.0 and their device structures were optimized based on forward and reverse electrical characteristics. Compared with the conventional power Schottky barrier diode, the device structure is featured by a highly doped drift region and embedded floating junction region, which can ensure high breakdown voltage while keeping lower specific on-state resistance, solved the contradiction between forward voltage drop and breakdown voltage. The simulation results show that with optimized structure parameter, the breakdown voltage can reach 4 kV and the specific on-resistance is 8.3 mΩ•cm 2 .

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“…To overcome this silicon limit, structural modifications in the drift region within the monotone epilayer have been proposed. Such modifications include the formation of a buried oppositely doped region or vertically-stacked p-n regions [4][5][6], or vertical and multi-RESURF superjunction (SJ) structures made of interdigitated p-n columns [7][8][9][10][11][12]. The approach presented in [4][5][6] utilizes the floating island concept to raise the level of the breakdown voltage, whereas the one in [7][8][9][10][11][12] utilizes chargecompensation-based sidewall junction depletion to establish punch-through in the drift region at high doping level.…”

Section: Introductionmentioning

confidence: 99%

Practical superjunction MOSFET device performance under given process thermal cycles

Zhong¹,

Liang²,

Samudra³

et al. 2004

Semicond. Sci. Technol.

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The performance of specific on-state resistance (R on,sp ) versus breakdown voltage (V br ) of a superjunction power MOSFET device is constrained by the quality of its sidewall junctions formed by neighbouring p and n columns in the drift region. The p-n junction quality, which is inevitably affected by the inter-column dopant diffusion in practice, will limit the R on,sp -V br device performance if no compensation measure is taken. A detailed study of the influence of sidewall junction quality on performance at various column widths under given thermal process conditions was carried out through process and device simulations. The study discovers the practical optimal performance of superjunction (SJ) DMOS and UMOS structures under the influence of dopant inter-column diffusion. Analysis of the phenomenon shows that the degradation of the breakdown voltage is caused by the p and n column charge imbalance. Practical SJ performance equations, which model the influence reasonably well, are derived in the paper. These equations can be used to predict the practical performance of an SJ device under given thermal conditions, which in turn guides us to the compensation measures required to achieve better performance.

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A novel high-voltage sustaining structure with buried oppositely doped regions

Cited by 48 publications

References 7 publications

Modeling of 4H—SiC multi-floating-junction Schottky barrier diode

Modeling of 4H—SiC multi-floating-junction Schottky barrier diode

Optimized design of 4H-SiC floating junction power Schottky barrier diodes

Practical superjunction MOSFET device performance under given process thermal cycles

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