A novel high-power laser structure with current-blocked regions near cavity facets

Shibutani, T.; Kume, M.; Hamada, K.; Shimizu, Hirokazu; Itoh, Kunio; Kano, G.; Teramoto, I.

doi:10.1109/jqe.1987.1073448

Cited by 33 publications

(6 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…COD schemes similar to Fig. 2 have been published by several other authors as well [9,12,14,21,26,27].…”

Section: Cod and Thermal Runawaymentioning

confidence: 90%

“…This paper was a milestone in the understanding of the thermal runaway, as it showed for the first time a direct measurement of the critical temperature. Later, it was shown that extrinsic effects such as surface recombination and the creation of structural defects are involved in the absorption and temperature rises as well, and eventually even dominate [8,[12][13][14][15]. Figure 2 describes the thermal runaway as it can happen either at the facet or anywhere in the bulk of the device.…”

Section: Cod and Thermal Runawaymentioning

confidence: 99%

“…Extra processes such as InGaP-or ZnSe-epitaxy [42,49] are applied as well. Additional methods for increasing the COD threshold are: -Non-injecting mirrors [14,[50][51][52][53]. This approach relies on the reduction of the current density (and thus carrier concentration) at the front facet.…”

Section: Robustness Of Diode Lasers Against Codmentioning

confidence: 99%

See 2 more Smart Citations

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

View full text Add to dashboard Cite

Semiconductor lasers are the most efficient manmade narrow-band light sources and convert up to threequarters of electric energy into light. High-power diode lasers are characterized by very high internal power densities in their small cavity, resulting in local heating and sometimes device degradation. Catastrophic optical damage (COD) of diode lasers is a relevant degradation mechanism and limit for reaching ultrahigh optical powers. An overview is given on research activities targeting the mechanisms being relevant for the COD process in GaAs-based diode lasers emitting in the 630-1100 nm range. The discussion of experiments, where COD is artificially provoked, represents the main topic. The sequence of events and fast kinetics taking place on a nanosecond to microsecond time scale are addressed. A particular emphasis is laid on recent experimental work performed in the authors' laboratories. Paving the way for knowledge-based solutions towards more robust diode lasers represents the ultimate goal of this work. COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.

show abstract

“…COD schemes similar to Fig. 2 have been published by several other authors as well [9,12,14,21,26,27].…”

Section: Cod and Thermal Runawaymentioning

confidence: 90%

Section: Cod and Thermal Runawaymentioning

confidence: 99%

See 1 more Smart Citation

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Tomm

Ziegler

Hempel

et al. 2011

Laser & Photonics Reviews

View full text Add to dashboard Cite

show abstract

“…Direct experimental verification of such process has been reported for the first time by Tang et al [10]. In later studies [43][44][45][46][47], the influence of extrinsic effects was shown such as surface recombination and creation of structural defects [48]. The mechanism leading to COD can be described by the following sequential steps: nonradiative recombination at the mirror facet increases the local temperature with concurrent band-gap shrinking, which increases the light self-absorption at the facets, generating additional e-h pairs, which recombine nonradiatively, further increasing the temperature of the facet region.…”

Section: Thermal Processes In Semiconductor Lasers Basic Degradation ...mentioning

confidence: 98%

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Pierścińska

2017

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

show abstract

“…Numerous solutions of the optical damage problem 2 have been proposed that include non-absorbing (with, e.g., intermixing techniques 3 ) and non-injecting mirrors, 5 large optical cavity, 4 and aluminum-free laser diode concepts 6 as well as sophisticated facet passivation techniques. On the other hand, short pulsed gain-switched laser operation allows 1-2 orders higher output power due to reduction of the overheating effects.…”

mentioning

confidence: 99%

Dropout dynamics in pulsed quantum dot lasers due to mode jumping

Sokolovskiĭ¹,

Viktorov

Abusaa

et al. 2015

Applied Physics Letters

View full text Add to dashboard Cite

We examine the response of a pulse pumped quantum dot laser both experimentally and numerically. As the maximum of the pump pulse comes closer to the excited-state threshold, the output pulse shape becomes unstable and leads to dropouts. We conjecture that these instabilities result from an increase of the linewidth enhancement factor α as the pump parameter comes close to the excitated state threshold. In order to analyze the dynamical mechanism of the dropout, we consider two cases for which the laser exhibits either a jump to a different single mode or a jump to fast intensity oscillations. The origin of these two instabilities is clarified by a combined analytical and numerical bifurcation diagram of the steady state intensity modes.

show abstract

A novel high-power laser structure with current-blocked regions near cavity facets

Cited by 33 publications

References 5 publications

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Dropout dynamics in pulsed quantum dot lasers due to mode jumping

Contact Info

Product

Resources

About