A novel high density contactless flash memory array using split-gate sources-side-injection cell for 5 V-only applications

Ma, Yue; Pang, Chin‐Sheng; Pathak, Jay; Tsao, Shouchang; Chang, Chih-Shen; Yamauchi, Y.; Yoshimi, M.

doi:10.1109/vlsit.1994.324383

Cited by 20 publications

(6 citation statements)

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“…The SSI mechanism is sketched in Figure 1a with the dashed arrow and takes place approximately in the region between X WL and X FG . Electrons are injected from the substrate to the closest FG corner, involving both the horizontal and the vertical components of the electric field [14][15][16]. The vertical component is fixed by V FG and is further enhanced thanks to the tip geometry of the FG; the horizontal component depends on the channel state, which in turn is influenced by the bias conditions applied on all the electrodes which overlook the channel, i.e., WL, bit line (BL), common source (CS) and FG itself.…”

Section: Introductionmentioning

confidence: 99%

Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory

Mazzetta

Irrera

2021

Electronics

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A theoretical study of the influence of word line and common source electrodes on the program operation in shrank SuperFlash memory is proposed. Numerical simulations demonstrate that the literature model defined for previous nodes is not always suitable, due to the continuous cell physical size reduction and to the consequent increment of capacitive coupling between the floating gate and adjacent electrodes. To get a deeper insight, an analytical model of the electric field in the region of source side injection is proposed. This model describes the impact of the cell physical and electrical parameters on the vertical and horizontal field components and highlights the strong dependence of the carrier injection on the technology node. Furthermore, the numerical and analytical models estimate the influence of the word line and common source electrodes on the time-to-program, the floating gate potential and the source side injection efficiency, taking into consideration, at the same time, their possible impact on the cell reliability.

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Section: Introductionmentioning

confidence: 99%

Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory

Mazzetta

Irrera

2021

Electronics

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“…[1][2][3] During the past one decade, flash memory has been shown to have unbeatable characteristics in terms of highdensity storage, power consumption and stable reliability; therefore, it has occupied the leading position in both standalone products and embedded application for a long time. [4][5][6][7][8][9] Among various technologies of flash memory, split gate flash memory using source-side-enhanced hot-electron injection with high programming efficiency and tip structures to improve the local electric field is very popular for embedded systems. [10][11][12][13][14] To meet its customized requirement, such as those for mobile or automotive application, the optimization of processes has been extensively discussed.…”

Section: Introductionmentioning

confidence: 99%

A novel high-density embedded AND-type split gate flash memory

Shen

Wang

Pan

et al. 2014

Jpn. J. Appl. Phys.

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High-β spherical tokamak (ST) plasma conditions cut off propagation of electron cyclotron (EC) waves used for heating and current drive in conventional aspect ratio tokamaks. The electron Bernstein wave (EBW) has no density cutoff and is strongly absorbed and emitted at the EC harmonics, allowing EBWs to be used for heating and current drive in STs. However, this application requires efficient EBW coupling in the high-β, H-mode ST plasma regime. EBW emission (EBE) diagnostics and modelling have been employed on the National Spherical Torus Experiment (NSTX) to study oblique EBW to O-mode (B-X-O) coupling and propagation in H-mode plasmas. Efficient EBW coupling was measured before the L-H transition, but rapidly decayed thereafter. EBE simulations show that EBW collisional damping prior to mode conversion (MC) in the plasma scrape off reduces the coupling efficiency during the H-mode phase when the electron temperature is less than 30 eV inside the MC layer. Lithium evaporation during H-mode plasmas was successfully used to reduce this EBW collisional damping by reducing the electron density and increase the electron temperature in the plasma scrape off. Lithium conditioning increased the measured B-X-O coupling efficiency from less than 10% to 60%, consistent with EBE simulations.

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“…The cell is erased using Fowler-Nordheim (F-N) tunneling through interpoly oxide. In addition, source side hot electron injection is used to program the cell, which is at least one to two orders of magnitude larger in electron injection efficiency than the channel hot electron injection [8]- [10]. Therefore, its application to portable systems is highly promising due to the low power consumption during cell operation.…”

Section: Introductionmentioning

confidence: 99%

Shrinkable Triple Self-Aligned Field-Enhanced Split-Gate Flash Memory

Chu

Lin

Hsieh

et al. 2004

IEEE Trans. Electron Devices

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This paper demonstrates a shrinkable triple self-aligned split-gate Flash cell fabricated using a standard 0.13-mcopper interconnect process. The approach used here to create a self-aligned structure is to form a spacer against the prior layer. Due to a higher aspect ratio when the cell pitch decreases, the profile of the spacer structure becomes sharper. This improves process control of the spacer profile and length. All the processes used here are compatible with standard logic process. The word line channel length of the cell is 0.11 m. It is comparable in area with a stacked-gate cell and can be less than 13F 2 . The cell is erased by using poly-poly Fowler-Nordheim tunneling with a sharp floating-gate edge to increase the electric field, and is programmed by source-side injection. As a result, this cell is highly suitable for low power applications and embedded products. Characterization shows considerable program and erase speed, up to 300 K times cycling endurance, and excellent disturb margins.

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A novel high density contactless flash memory array using split-gate sources-side-injection cell for 5 V-only applications

Cited by 20 publications

References 0 publications

Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory

Influence of Common Source and Word Line Electrodes on Program Operation in SuperFlash Memory

A novel high-density embedded AND-type split gate flash memory

Shrinkable Triple Self-Aligned Field-Enhanced Split-Gate Flash Memory

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