A Novel High Aspect Ratio Technology for MEMS Fabrication Using Standard Silicon Wafers

Highly Miniaturized MEMS‐Based Test Platforms for Thermo‐Mechanical and Reliability Characterization of Nano‐Functional Elements − Technology and Functional Test Results

“…The challenge still was the patterning of the metal and oxide layers on the surface relief of 3 µm near the piezoresistive elements. To remove the Si underneath the aluminum specimen and thus releasing the sample, a dry etch processes similar to AIM technology can be used. This approach could also be very well suited for the integration of different samples including CNTs.…”

“…Figure j). For this anisotropic etch step based on the “Bosch” multiplex Si etching principle, an optimized etch process (adopted to the equipment with device specific parameters) at a low etch rate has been used , and the etch time has been adjusted such that all trenches reach the underlying cavity (52 min). With the optical microscope the smallest gaps, the piezoresistive structures, and the aluminum tensile specimen can be inspected to control process time and results.…”

“…For removing the silicon underneath the aluminum samples, first the resist is removed. The release processing consists of an isotropic Si etch process similar to the AIM technology with equipment‐specific parameters . To know how much time is needed, the width of some aluminum samples were measured after lithography of the aluminum (nominal size: 2 µm; real size: 1…1.7 µm).…”

Mechanical strength study of SiO2isolation blocks merged in silicon substrate

“…The integration of a bulk sensor with an electronic circuit demands the mechanically robust electric isolation of microelectromechanical systems (MEMS) structures from each other and circuits. Different ways of isolating moveable microstructures from fixed ones have been reported [1][2][3][4][5].…”