A novel FET structure of buried plated heat sink for superior high performance GaAs MMICs

Okaniwa, Kazuhiro; Ishikawa, T.; Kosaki, K.; Komaru, M.; Notani, Y.; Kobiki, M.; Mitsui, Y.; Orisaka, S.; Nishitani, K.

doi:10.1109/gaas.1990.175495

Cited by 7 publications

(1 citation statement)

References 5 publications

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“…The circuit was fabricated on GaAs substrates with a thickness of 0.1 mm. The FETs used have a buried PHS structure [19]. The circuit size is 3.2 X 3.4 mmz.…”

Section: Fabrication and Performance Of The Amplifiermentioning

confidence: 99%

An ultrabroadband monolithic lossy match power amplifier using prematching circuits

Itoh

Mochizuki

Nii

et al. 1996

Electron Comm Jpn Pt II

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This paper describes the design, fabrication, and performance of wideband monolithic lossy match power amplifiers employing prematching circuits, which make the frequencydependence of input and output impedance of FETs small. First, it is shown theoretically that a wide bandwidth can be achieved by using prematching circuits in the design of lossy match power amplifiers. Second, a novel constant-resistance network and a parallel resonant circuit are proposed as prematching circuits. Impedance matching methods using prematching circuits are also described. Finally, by employing these prematching circuits in the design and fabrication of a C -K bandpower amplifier, it is experimentally shown that the impedance matching methods using prematching circuits are useful in the design of wideband lossy match power amplifiers. The amplifier exhibits a linear gain of 10 f 2.3 dB, a saturated power of 28.3 f 1 dBm, and a drain efficiency of 12.6 f 2.2 percent over 5 -21 GHz. These measured performances are in good agreement with the calculated results. The prematching circuits, which make the frequencydependence of input and output impedance of FETs small, are useful for achieving a wide bandwidth of lossy match power amplifiers. In addition, the parallel resonant circuit, which comprises only reactive elements, is also useful in the design of output matching circuits for achieving high gain and high power.

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“…The circuit was fabricated on GaAs substrates with a thickness of 0.1 mm. The FETs used have a buried PHS structure [19]. The circuit size is 3.2 X 3.4 mmz.…”

Section: Fabrication and Performance Of The Amplifiermentioning

confidence: 99%