lst 2"d 3rd Total Stage Stage Stage Periphery Abstract -The development of three-power amplifier MMICs covering 18-28GHz, 26-32GHz, and 37-42GHz frequencies separately is described. The amplifiers employed a unique staggered matching technique and single-ended like topology to maximize RF performances on a smallest diesize. The designed power amplifiers exhibit 20 dB of small signal gain, more than 30dBm of 1dB gain compression output power with more 20% typical power added efficiency. These MMIC were fabricated in a 6" foundry PHEMT process and have been demonstrated in fully production capability , Index Terms -MIMICS, Millimeter wave power amplifiers, MODFET amplifiers, MODFET --_[GHZI [pi] [pi] [pi] [pml 18-28 4(60x4) 4(75x6) 4(100x8) 5960 26-32 4(70x4) 4(80x6) 4(100x8) 6320 37-42 4(78x4) 4(83.5x6) 4(100x8) 6400
I. IntroductionWideband, low-cost, power amplifiers (PA) are crucial to the development of mm-wave commercial wireless links such as Local Multipoint Distribution Service (LMDS), and point-to-point radio, as the market for these applications mature. Requirements of power amplifiers for mm-wave radio applications are small die size, high gain, high power, high linearity, and high efficiency. To realize those requirements, many amplifiers for K band applications have been proposed [ 11-[4]. However, only a few papers have been published for Q and above frequency band applications [5]-[6] due to a difficulty of the circuit simulation at very high frequency and requirement of advanced semiconductor process. To realize high performance power amplifiers for K through Q band applications, fully monolithic 1 W, 18-28GHz, 26-32GHz, and 3742GHz power amplifier MMICs have been developed. Three amplifiers employed a unique staggered matching circuit design technique. Three amplifiers also employed unique singleended amplifier like topology to minimize gate periphery and maximize linearity.The designed amplifier showed 20dB of typical gain and typically 30dBm p-ldB with 20% typical PAE.