A novel end point detection technique for in situ development of photoresist

Temmel, G.; Ryssel, H.

doi:10.1016/0167-9317(93)90077-i

Cited by 3 publications

(2 citation statements)

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“…Hence, optical in situ metrology for resist thickness measurements and endpoint detection in resist development was developed. Singlewavelength and spectroscopic reflectometry were applied and tested by different groups (4)(5)(6). At the Fraunhofer IISB, a robust in situ spectroscopic reflectometer setup enabling fast resist thickness measurements and endpoint detection in development processes was developed (Figure 4).…”

Section: Application Of Spectral Reflectometry For the Control Of Res...mentioning

confidence: 99%

Process Optimization by Means of Integrated Monitoring Tools in the Semiconductor Industry

Pfitzner

Nutsch²,

Roeder³

et al. 2007

ECS Trans.

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Semiconductor manufacturing still follows Moorés Law, stating a cost reduction of approximately 25 to 30 % per year, a value actu-ally achieved in the past 40 years. One of the key enablers for fur-ther continuation of Moore's Law will be a much tighter process control. This paper describes aspects of Advanced Process Control and especially of integrated metrology, the foundation of process optimization by means of integrated process monitoring tools. Shortest response time requires that measurement methods have to be engineered as near as possible to the process itself, thus reduc-ing the time between processes, measurement and corrective ac-tions. Such integrated metrology is realized as in-line metrology, in situ metrology or virtual metrology. This paper presents the devel-opment of sensors, their integration and results for control of resist processing in lithography, use of according sensors for the control and endpoint detection in CMP processes, and novel methods for geometrical metrology in CMP process monitoring.

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Section: Application Of Spectral Reflectometry For the Control Of Res...mentioning

confidence: 99%

Process Optimization by Means of Integrated Monitoring Tools in the Semiconductor Industry

Pfitzner

Nutsch²,

Roeder³

et al. 2007

ECS Trans.

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show abstract

“…During the past few decades, several types of endpoint-detection (EPD) systems based on refractometry, microscopy and measurements of nuclear magnetic resonance, low-frequency capacitance, the vanishing line, emission spectroscopy, in situ ellipsometry etc have been developed in order to monitor the development of a photoresist (PR) and to calculate the changes in the key parameters such as thickness, index of refraction and rate of dissolution of the PR [1][2][3][4][5][6]. Among these systems, laser interferometry has recently been developed in order to achieve dynamic monitoring of the process with high reproducibility and temporal resolution of the parameters with high accuracy [7,8].…”

Section: Introductionmentioning

confidence: 99%

A plastic-fibre-bundle-based transducer array for mapping and detection of the end point for dissolution of a photoresist

Lin

Horng

2001

Meas. Sci. Technol.

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Dynamical mapping of the development of a photoresist by use of a two-dimensional plastic-optical-fibre-bundle (POFB)-based transducer array is demonstrated in this work. The performance of a lens-free POFB transducer for in situ detection of the end point of the development of a photoresist is discussed. An improved optical collecting efficiency of up to 5-6 dB under a normal-detection scheme is achieved. The dissolution rate and thickness can be temporally resolved by this system with a standard deviation of less than 1.5%. The noise-equivalent power of the POFB transducer is as small as 100 nW Hz −1/2 with the use of a modulated laser source.

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An Improved Fiber-Bundle-Coupler Array for End-Point Detection Process

Lin¹

2001

Jpn. J. Appl. Phys.

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We demonstrated a new-designed plastic-optical-fiber-bundle (POFB) coupler array for dynamic monitoring and end-point detection of the photoresist development process. A better optical collecting efficiency is achieved by using a normal illumination/detection scheme and a POFB coupler with larger cross section. Time-resolved dissolution rate can be obtained by synchronous calculation of the reflected optical interference data with deviation of less than 1.5%. Experiment on in-situ mapping of transient thickness variation of photoresist film during development by using two-dimensional POFB coupler array is also reported. The POFB-based coupler exhibits relatively low coupling and insertion loss at visible light wavelength as compared with the silica-fiber-based one. The system is compatible for real-time/multi-port measurements of micro-lithographic and dielectric etching processes.

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A novel end point detection technique for in situ development of photoresist

Cited by 3 publications

References 1 publication

Process Optimization by Means of Integrated Monitoring Tools in the Semiconductor Industry

Process Optimization by Means of Integrated Monitoring Tools in the Semiconductor Industry

A plastic-fibre-bundle-based transducer array for mapping and detection of the end point for dissolution of a photoresist

An Improved Fiber-Bundle-Coupler Array for End-Point Detection Process

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