A Novel Dual-Directional SCR Structure With High Holding Voltage for 12-V Applications in 0.13-μm BCD Process

Do, Kyoung-Il; Song, Bo-Bae; Koo, Yong-Seo

doi:10.1109/ted.2020.3023064

Cited by 23 publications

(3 citation statements)

References 32 publications

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“…Therefore, an additional NPN bipolar transistor Q1 is used to provide lower on-resistance characteristics. It is designed to be optimized for the 3.3 V application, the minimum operating voltage of the proposed LDO regulator [25][26][27][28][29][30][31][32][33][34][35].…”

Section: Current Driving Buffer Structurementioning

confidence: 99%

Design of Capacitor-Less High Reliability LDO Regulator with LVTSCR Based ESD Protection Circuit Using Current Driving Buffer Structure

Kwon

Koo

2022

Electronics

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The peak voltage depending on the load current can be affected by the external capacitors installed in the output stage of the LDO regulator. However, the capacitor-less LDO regulator proposed in this study was applied a current driving buffer structure between the output stage of the error amplifier and the path transistor. Therefore, the proposed LDO regulator maintained a stable output voltage regardless of the load current by controlling an effective overshoot/undershoot voltage. In addition, the proposed LDO regulator has a built-in LVTSCR based on the ESD protection circuit. As most IC circuits are malfunctioned and destroyed by the ESD phenomenon, the reliability was verified through the built-in ESD protection circuit of the proposed LDO regulator. The proposed LDO regulator with the current driving buffer structure can effectively control the peak voltage. As a result of the measurement, the undershoot voltage of 22 mV and the overshoot voltage of 19 mV were maintained when the load current of 250 mA was provided under the conditions of 3.3 V to 4.5 V and the output power voltage of 3 V. The proposed ESD protection circuit is also guaranteed to function at temperatures as high as 500 K.

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Section: Current Driving Buffer Structurementioning

confidence: 99%

Design of Capacitor-Less High Reliability LDO Regulator with LVTSCR Based ESD Protection Circuit Using Current Driving Buffer Structure

Kwon

Koo

2022

Electronics

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“…Therefore, an important parameter in IC manufacturing is maintaining high ESD immunity at reduced chip area. To solve this problem, the proposed LDO regulator has a built-in SCR-based ESD protection circuit designed by itself to counter the IC destruction caused by static [20,21,22,23,24].…”

Section: Introductionmentioning

confidence: 99%

Design of high-reliability LDO regulator with SCR based ESD protection circuit using body technique and load transient detection

Kwon¹,

Koo²

2022

IEICE Electron. Express

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External capacitors in conventional LDO regulators can reduce transient response characteristics such as overshoot and undershoot. However, the capacitor-less LDO regulator proposed in this study achieves the transient response improved by applying body technique to the pass transistor, thereby provides the high areal efficiency and excellent current driving capability, and shows the improved ESD robustness characteristics. Also, the proposed ESD protection device based on due to the SCR (Silicon Control Rectifier) built into the output node and the power line. As a result, it was confirmed that the transient response characteristics of the proposed LDO regulator were improved and free space could be secured by applying the body technique of the pass transistor. The operating conditions of the proposed LDO regulator were set as an input voltage varying from 3.3 V to 4.5 V, a maximum load current of 200 mA, and the output voltage of 3 V. As a result of the measurement, when the load current was 200 mA, the voltage was found to be 23 mV in the undershoot state and 29 mV in the overshoot state. In addition, the ESD robustness characteristic of HBM is secured at 8 kV or higher.

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“…

In Section I of the above article [1], the sentence beginning in the 18th line of the second column contains typos that misrepresent the range of voltages. The correct sentence is the following: "However, the strong snapback characteristics of a traditional SCR structure that are caused by high avalanche breakdown between the well regions allow it to have a substantially high trigger voltage (approximately 17-22 V) and low holding voltage (approximately 2-4 V).

…”

mentioning

confidence: 99%

Corrections to “A Novel Dual-Directional SCR Structure With High Holding Voltage for 12-V Applications in 0.13-μm BCD Process” [Nov 20 5020-5027]

Song

Koo

2021

IEEE Trans. Electron Devices

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A Novel Dual-Directional SCR Structure With High Holding Voltage for 12-V Applications in 0.13-μm BCD Process

Cited by 23 publications

References 32 publications

Design of Capacitor-Less High Reliability LDO Regulator with LVTSCR Based ESD Protection Circuit Using Current Driving Buffer Structure

Design of Capacitor-Less High Reliability LDO Regulator with LVTSCR Based ESD Protection Circuit Using Current Driving Buffer Structure

Design of high-reliability LDO regulator with SCR based ESD protection circuit using body technique and load transient detection

Corrections to “A Novel Dual-Directional SCR Structure With High Holding Voltage for 12-V Applications in 0.13-μm BCD Process” [Nov 20 5020-5027]

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