A novel double-density, single-gate vertical channel (SGVC) 3D NAND Flash that is tolerant to deep vertical etching CD variation and possesses robust read-disturb immunity

Lue, Hang-Ting; Hsu, Tzu-Hsuan; Wu, Chao-I; Chen, Wei‐Chen; Yeh, Teng-Hao; Chang, Kai‐Chun; Hsieh, Chih-Chang; Du, Pei-Ying; Hsiao, Yi‐Hsuan; Jiang, Yu-Wei; Lee, Guan-Ru; Lo, Roger; Su, Yan-Ru; Huang, Chien‐Chang; Lai, Sheng-Chih; Liang, Li-Yang; Chen, Chieh-Fang; Hung, Min-Feng; Hu, Chih‐Wei; Chiu, Chia-Jung; Lu, Chih‐Yuan

doi:10.1109/iedm.2015.7409617

Cited by 22 publications

(7 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similarly, the flat-cell single-gate device is also realized with an ultra-thin body of less than 8 nm. As a result, both the GAA CT Cell and flat cell can take advantage of the thin-body TFT advantages [33]. Figure 14b shows a cross-section of a SGVC cell and a GAA cell; it is shown that the cells in fact have the same device structure when looking through a vertical cross-section.…”

Section: Comparison Between Ct Flat Cell and Gaa Cell Structuresmentioning

confidence: 98%

See 1 more Smart Citation

3D NAND Flash Based on Planar Cells

Silvagni¹

2017

Computers

View full text Add to dashboard Cite

Abstract:In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a "punch-and-plug" process-with gate-all-around (GAA) cell devices-against architectures that are based on planar cell devices. The differences and similarities between the two classes of architectures are highlighted. The differences between architectures using floating-gate (FG) and charge-trap (CT) devices are also considered. Although the current production of 3D NAND is based on GAA cell devices, it is suggested that architectures with planar cell devices could also be viable for mass production.

show abstract

Section: Comparison Between Ct Flat Cell and Gaa Cell Structuresmentioning

confidence: 98%

“…A SGVC [33] is also based on a flat-channel TFT cell. For a SGVC (Figure 12), the charge-trapping layers and the thin-channel are deposited on the sidewalls of a wordline trench; a bitline cut (BLC) is necessary in order to separate the bitlines and to form the strings.…”

Section: Single-gate Vertical Channel (Sgvc) Architecturementioning

confidence: 99%

3D NAND Flash Based on Planar Cells

Silvagni¹

2017

Computers

View full text Add to dashboard Cite

show abstract

“…A Single Gate Vertical Channel (SGVC) architecture not based on drilled-hole channel with GAA structure has been presented [9]. The SGVC structure shown in Fig.…”

Section: D Nand Architecturesmentioning

confidence: 99%

“…The scalability of the architecture has been studied down to the 2× nm node. [9] polysilicon gate and the polysilicon channel. The charge trapping medium is a very planar BE-SONOS stack (ONONO).…”

Section: Vg-type 3d Nand Architecturementioning

confidence: 99%

See 1 more Smart Citation

3D VG-Type NAND Flash Memories

Silvagni

2016

3D Flash Memories

View full text Add to dashboard Cite

Solid State Disk applications have been the main drivers for the cost reduction of NAND Flash memory. Technology scaling limits have been almost reached and new directions were investigated for a decade. 3D NAND appeared as the most promising and short term viable solution to the scaling problem. 3D NAND offers the possibility to keep scaling memory density beyond 2D NAND 1z nm technology and opens new landscapes if the technology hurdles can be definitely overcome. Additionally Multi bit per cell technology is applicable to 3D NAND as well; therefore, the storage capacity growth trend is not going to meet the inflection point soon. Big Data storage demand remains certainly the driver for the rapidity of 3D NAND to become industry mainstream.With respect to the flat 2D NAND Flash, three-dimensional architectures demand a more challenging approach to deal with process, design architectures, parasitic effects, testing. At the time of writing this chapter, 3D technology is moving into production inside solid state storage solutions; however, those NAND chips aren't commercially available as raw components. 3D NAND chips are used by vertically integrated manufacturers and few partners to build the storage systems under a strict control on the usage. Technology solutions are still diversified among the few players in the 3D arena and no unique mainstream solution is emerged yet.In this chapter the principal architectural pieces of 3D NAND will be reviewed putting the focus on one of them: VG-Type, Vertical Gate 3D NAND.

show abstract

Creating the Future with Silicon

Jung

2023

Adv Materials Technologies

View full text Add to dashboard Cite

The rise of AI technology, the expansion of smart and connected devices, and the COVID‐19 global pandemic have driven a change in the nature of social interactions from face‐to‐face to contact‐free/remote, which has tremendously increased the demand for various semiconductor devices. However, scaling and performance improvement of semiconductor devices are becoming more difficult every year, and extensive studies have been conducted to overcome these technological roadblocks. This paper reviews the present state of semiconductor development and discusses several approaches to overcome these scaling and performance limitations. Additionally, the importance of collaboration and the related ecosystem is emphasized to strengthen the cooperation among semiconductor stakeholders and support further semiconductor development.

show abstract

A novel double-density, single-gate vertical channel (SGVC) 3D NAND Flash that is tolerant to deep vertical etching CD variation and possesses robust read-disturb immunity

Cited by 22 publications

References 3 publications

3D NAND Flash Based on Planar Cells

3D NAND Flash Based on Planar Cells

3D VG-Type NAND Flash Memories

Creating the Future with Silicon

Contact Info

Product

Resources

About