1991
DOI: 10.1016/0924-4247(91)87067-d
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A novel diffusion-based silicon nuclear radiation detector

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1991
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Cited by 7 publications
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“…At the same time, the low wafer thickness and low background doping (8 x 10 14 cm -3 ) ensures that the generated electron-hole pairs can easily diffuse to the depletion layer and generate a current before recombining. 13 Hence, while the 50 µm thickness was initially chosen for its mechanical flexibility, it is also favorable for alpha-detector operation.We determined a pn-junction depth of ca. 2.5 µm via a thickness measurement of the phosphosilicate glass on the doped wafers.…”
mentioning
confidence: 99%
“…At the same time, the low wafer thickness and low background doping (8 x 10 14 cm -3 ) ensures that the generated electron-hole pairs can easily diffuse to the depletion layer and generate a current before recombining. 13 Hence, while the 50 µm thickness was initially chosen for its mechanical flexibility, it is also favorable for alpha-detector operation.We determined a pn-junction depth of ca. 2.5 µm via a thickness measurement of the phosphosilicate glass on the doped wafers.…”
mentioning
confidence: 99%