A Novel Design Method of SOF for InP DHBT ECL and CML Static Frequency Dividers

Zhen, Wenxiang; Cao, Shurui; Su, Yongbo; Li, Shaojun; Jin, Zhi

doi:10.1109/lmwc.2021.3064075

Cited by 8 publications

(2 citation statements)

References 15 publications

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“…At this time, nodes X and Z in Fig. 3(b), can be regarded as virtual ground [29]. Therefore, it can be inferred that capacitive degeneration has little effect on the SOF.…”

Section: Proposed Ecl Corementioning

confidence: 99%

A broadband static frequency divider up to 62GHz in InP DHBT with capacitive degeneration

Xiao

Zhen

Cao

et al. 2022

IEICE Electron. Express

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A broadband static frequency divider fabricated in a 165 GHz f t 0.8 µm InP DHBT process is described. Capacitive degeneration technique is adopted, extending the operating bandwidth with little increase in power consumption and area occupancy. The device characteristics are analyzed to achieve high device f t utilization. The chip occupies 0.484 mm×0.44 mm and consumes 380 mW from dual supplies of −2.5 V and −3.5 V. The measured input-referred self-oscillation frequency (SOF) is 56 GHz, and the output power locates in −5.87∼1.87 dBm. With single-ended sinewave input, the divider is operational in 2∼62 GHz, exhibiting a 0.36f t frequency range.

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“…At this time, nodes X and Z in Fig. 3(b), can be regarded as virtual ground [29]. Therefore, it can be inferred that capacitive degeneration has little effect on the SOF.…”

Section: Proposed Ecl Corementioning

confidence: 99%

A broadband static frequency divider up to 62GHz in InP DHBT with capacitive degeneration

Xiao

Zhen

Cao

et al. 2022

IEICE Electron. Express

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“…So far, numerous dividers based on different topologies and processes have been reported. Silicon-Germanium (SiGe) [11,12,13] and indium phosphide (InP) [14,15,16,17,18,19] are employed in many high-speed ECL dividers due to their high unity-gain (cut-off) frequency ( 𝑓 𝑡 ).In addition, several methods documented in the literature extend the operating frequency range of frequency dividers. These techniques include inductive peaking [20], split resistors [3], negative capacitance technology [21], and capacitive degeneration [22].In 1972, a differential implementation of the 𝑓 𝑡 -doubler structure was patented for the first time by Carl R. Batties [23], then it was applied in many field [24,25,26,27,28].…”

Section: Introductionmentioning

confidence: 99%

A broadband ECL static frequency divider in InP DHBT using differential <i>f<sub>t</sub></i>-doubler

Xu,

Lou,

et al. 2024

IEICE Electron. Express

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This letter presents a broadband ECL static divider using a 0.8-μ m InP DHBT process. The differential implementation of 𝑓 𝑡 doubler has been employed to extend the bandwidth at the cost of little increase in power dissipation and chip area. The frequency characteristics of the 𝑓 𝑡 -doubler circuit were analyzed. The chip area was 0.47mm*0.44mm and the total power dissipation was 417 mW from dual power supplies of -3.5 V and -2.5 V. The measurement result shows that the frequency divider can operate from 2 GHz to 66 GHz for sinusoidal input signal. The input reference SOF (self-oscillation frequency) is 59 GHz. the output power locates in 0.41 -10.35 dBm. This divider can operate within a frequency range of 2 GHz to 66 GHz, exhibiting a 0.4-𝑓 𝑡 frequency range.

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Design and Optimization of a High-Efficiency CML Frequency Divider in InP DHBT Technology with Maximized Self-Oscillation Frequency

Jiang

2024

2024 9th International Conference on Electronic Technology and Information Science (ICETIS)

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A Novel Design Method of SOF for InP DHBT ECL and CML Static Frequency Dividers

Cited by 8 publications

References 15 publications

A broadband static frequency divider up to 62GHz in InP DHBT with capacitive degeneration

A broadband static frequency divider up to 62GHz in InP DHBT with capacitive degeneration

A broadband ECL static frequency divider in InP DHBT using differential <i>f<sub>t</sub></i>-doubler

Design and Optimization of a High-Efficiency CML Frequency Divider in InP DHBT Technology with Maximized Self-Oscillation Frequency

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