2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512)
DOI: 10.1109/iscas.2004.1328249
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A novel delta-sigma modulator using resonant-tunneling quantizers

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Cited by 14 publications
(13 citation statements)
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“…The negative supply voltage Vss was −5 V. The amplitude of the clock voltages was 0.5 V with an offset of −2.5 V. The RTD and HEMT device models were the same as used previously [5]. All the RTD areas are assumed to be 30 µm 2 .…”
Section: Simulation Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The negative supply voltage Vss was −5 V. The amplitude of the clock voltages was 0.5 V with an offset of −2.5 V. The RTD and HEMT device models were the same as used previously [5]. All the RTD areas are assumed to be 30 µm 2 .…”
Section: Simulation Resultsmentioning
confidence: 99%
“…To solve the problem, an attempt to operate a MOBILE circuit in a differential manner was proposed and applied to a design of a 4-GHz continuous-time delta-sigma modulator [5]. However, the circuit was partially-differential, and an effective common-mode rejection was not obtained.…”
mentioning
confidence: 99%
“…Sigma-delta modulators built of nanoelectronic devices have been developed (Yokoyama et al, 2001), (Chibashi et al, 2004). A circuit shown in Fig.…”
Section: Sigma-delta Modulationmentioning
confidence: 99%
“…A circuit shown in Fig. 6 is a first-order SD modulator proposed in (Chibashi et al, 2004). It is a continuous-time correspondence to the lower SD modulator in Fig …”
Section: Sigma-delta Modulationmentioning
confidence: 99%
“…Logic functionality is achieved by embedding an input stage (compound-semiconductor transistors, HEMT or HBT) which modifies, according the applied input signal, the peak current of some of the RTDs. MML circuits have been mainly applied in communication systems, where their high-speed performance is expected to be of the most importance for future commercial applications [6], [7].…”
Section: Introductionmentioning
confidence: 99%