Limits to a correct operation in RTD-based ternary inverters

Núñez, Juan; Quintana, J. M.; Avedillo, M.J.

doi:10.1109/iscas.2008.4541490

Cited by 2 publications

(1 citation statement)

References 8 publications

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“…The first approach is to use RTD devices, or bipolar transistor, or depletion MOSFETs, which has advantage of very high speed [1], [2], [6]. However, the fabrication cost is high because it is not compatible with standard CMOS process.…”

Section: Introductionmentioning

confidence: 99%

Expandable MVL Inverter Compatible with Standard CMOS Process and Its Application to MVL Hysteresis Comparator

Mannan

Tanno

Tamura

et al. 2013

2013 IEEE 43rd International Symposium on Multiple-Valued Logic

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In this paper, a novel voltage-mode MVL inverter is proposed. The proposed inverter consists of two circuit blocks: MVL threshold comparator and Multi-level generator, which can be implemented by standard CMOS technologies. Next, the inverted MVL hysteresis comparator is also proposed as the application of the proposed MVL inverter. The proposed MVL inverter and inverted MVL hysteresis comparator are expandable, capable to use more numbers of levels in MVL circuits. The performances of all proposed MVL circuits were evaluated through HSPICE with the set of 0.18μm CMOS process parameters. From the simulation results, we could confirm that all proposed MVL circuits work well as theory.

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Section: Introductionmentioning

confidence: 99%

Expandable MVL Inverter Compatible with Standard CMOS Process and Its Application to MVL Hysteresis Comparator

Mannan

Tanno

Tamura

et al. 2013

2013 IEEE 43rd International Symposium on Multiple-Valued Logic

View full text Add to dashboard Cite

show abstract

New RTD‐Based General Threshold Gate Topologies and Application to Three‐Input XOR Logic Gates

Mirhoseini

Sharifi

Bahrepour

2010

Journal of Electrical and Computer Engineering

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This paper presents two new general threshold gate (GTG) structures which are based on the monostable-bistable element (MOBILE) as their main part. These new GTGs eliminate an RTD from the structure compared to old structures and lead to less elements count and better performance in terms of power consumption, maximum frequency, and power-delay product (PDP). In the paper also two new single gate three-input XOR logic gates based on the old GTGs and two ones based on the new GTGs are presented and simulated in HSPICE simulator.

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Limits to a correct operation in RTD-based ternary inverters

Cited by 2 publications

References 8 publications

Expandable MVL Inverter Compatible with Standard CMOS Process and Its Application to MVL Hysteresis Comparator

Expandable MVL Inverter Compatible with Standard CMOS Process and Its Application to MVL Hysteresis Comparator

New RTD‐Based General Threshold Gate Topologies and Application to Three‐Input XOR Logic Gates

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