A Novel Defect-Engineering-Based Implementation for High-Performance Multilevel Data Storage in Resistive Switching Memory

The Role of Ti Buffer Layer Thickness on the Resistive Switching Properties of Hafnium Oxide-Based Resistive Switching Memories

“…Although, it is known that the resistivity of the BMOs strongly depends on the exact oxygen stoichiometry, therefore, it is crucial to design the structure or selection of materials for RRAM to achieve reliable memory properties. 14,[25][26][27][28][29][30][31][32] In the previous work, we demonstrated that the HfO x -based RRAM with Ti buffer layer in TiN/Ti/HfO x /TiN stacks showed excellent resistive switching properties in terms of lifetime and memory performance for the single and 1 -kb array devices. 8,9,11 Although, the importance of Ti buffer layer in HfO x -based RRAM is fairly understood, however, detailed interpretation of Ti thickness dependent asymmetric switching nature is not entirely understood, which limits its application.…”

Tuning Resistive, Capacitive, and Synaptic Properties of Forming Free TiO2‐x‐Based RRAM Devices by Embedded Pt and Ta Nanocrystals

“…For that reason a self‐compliance behavior was observed with 3 nm Ta NCs sample, in contrast with the sample containing Pt NCs, where a compliance current ( I cc ) of 10 mA was enforced. In addition, series resistance effects could justify this behavior, which was also observed for the reference sample . Alternatively, capacitive changes have been attributed to gap modulation effect which, however, needs to change substantially (30 times) in order to explain our experiments, while CFs in multiple configuration is considered is incompatible with the area dependence characteristics, which imply the formation of limited number of CFs …”

Control of resistive switching behaviors of solution-processed HfOX-based resistive switching memory devices by n-type doping

“…concentration of V O . 24 First principle calculations indicate that metal doping in HfO X leads to decrease of V O formation energy next to the dopant. 22,23 This reduction in formation energy is related to the valence electron number.…”

“…4(a)), V O clusters are formed and scattered near the dopant as a result of reduction of formation energy. 24,25 Since V O concentration is initially large, no high electric eld is needed to generate more V O . Application of positive voltage, which is equal to the set process, causes redistribution of V O and formation of conductive lament ( Fig.…”