A Novel Configuration of a Microstrip Microwave Wideband Power Amplifier for Wireless Application

Rachakh, Amine; Larbi, El Abdellaoui; Zbitou, Jamal; Errkik, Ahmed; Tajmouati, Abdelali; Latrach, Mohamed

doi:10.12928/telkomnika.v16i1.7369

Cited by 9 publications

(9 citation statements)

References 11 publications

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“…The performance of the designed BPA is summarized and compared to state of the art broadband power amplifiers running in L and S bands in Table 1. Comparing the present work with similar contemporary state-of-art broadband PAs [21][22][23], we can clearly observe that the proposed broadband matching techniques are useful, and the designed BPA reaches an excellent bandwidth with good matching across the operating frequency ranges.…”

Section: Broadband Power Amplifier Layoutsupporting

confidence: 52%

Broadband GaAs FET Power Amplifier for L and S Bands Applications

Ribate¹,

Zbitou²,

Mandy³

et al. 2018

IJIES

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This paper proposes a Broadband Power Amplifier (BPA) for L and S bands applications based on ATF13786 transistor, using GaAs process. To improve the broadband performance, an approximate transformation of previously designed lumped elements into transmission lines, and a multi-section quarter wave impedance transformer are used. With neatly design of the broadband networks and bias circuit, a maximum gain of 14.89 dB is achieved across 1.1 GHz  3 GHz. At 2 GHz, the simulated large signal results demonstrate that the designed BPA achieves a saturated output power of 17 dBm, with 1-dB compression point at 4 dBm input power level, and a PAE of 20 %. For the whole bandwidth, the input return loss and output return loss are below than-10 dB. The maximum value achieved by the reverse transmission is-20 dB over the operation frequency ranges. Considering the broad frequency coverage, the performance of the proposed design compares favorably with the state-of-art.

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Section: Broadband Power Amplifier Layoutsupporting

confidence: 52%

Broadband GaAs FET Power Amplifier for L and S Bands Applications

Ribate¹,

Zbitou²,

Mandy³

et al. 2018

IJIES

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“…PA is the most important block that amplifies the RF signal to power the antenna and provides the highest possible gain with the lowest possible reflectance. There have been many studies on designing and manufacturing power amplifiers performed in different frequency bands [1]- [25] and solving issues such as: increase power and efficiency [3], [6]- [8], [12], [16], increase circuit bandwidth and reduce intermodulation distortion [1], [5], [9]- [11], [13]- [15], [17]- [25].…”

Section: Introductionmentioning

confidence: 99%

Design of high power amplifier based on wilkinson power combiner for wireless communications

Hoi¹,

Lanh²

2021

IJEECS

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Thisarticlepresentsthedesign and fabrication ofa high power amplifierbased onwilkinson power combiner. A 45W basic amplifier module isdesigned usinglaterally-diffused metal-oxide semiconductor (LDMOS) fieldeffect transistor (FET) PTFA260451E transistor. Wilkinson power combineris used to combine two input powers toproduce 90W of power. Theproposed power amplifier is researched, designed and optimized usingadvanced design system(ADS) software.Experimental results show that thegain is 11.5 dB greater than at 2.45-3.0GHz frequency band and achieving maximum power gain of 13.5dB at 2.65GHz centre frequency; output power increased to 49.3dBm; Power added efficiency of 62.1% and good impedances matching: input reflection coefficient (S11)<-10dB, output reflection coefficient (S22)<-15dB. The designed amplifier can be used for4G, 5G mobile communications andS-band satellite communication.

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“…At the present, almost every communication system has some sort of transceiver, and inherently a Radio Frequency Power Amplifier (RFPA), running in one of the following bands (defined by IEEE standard 521-1984): L -S -C -X or Ku bands, from 1 GHz to 18 GHz, operating at Ultra-High Frequencies (UHF) and Super-High Frequencies (SHF) [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Broadband Solid State GaAs Power Amplifier for L and S Bands Applications.

Ribate¹,

Mandry²,

Abdellaoui

et al. 2019

Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 20

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This paper proposes the research of a single stage Broadband Solid State Power Amplifier (BPA) based on ATF13786 transistor, using GaAs process. This BPA operates in the frequency band ranging from 1.35 GHz to 3 GHz which covers the mainstream communication standards running in L and S Bands. The design approach is based on the real frequency technique. The simulated results are obtained by using ADS circuit simulator. In order to improve the broadband response, a multi-section quarter wave impedance transformer combined with an approximate transformation of a previously designed lumped elements into a transmission lines are used. The simulation results show a saturated output power of 17.85 dBm, with PAE of the 11% and a maximum power gain of 16.68 dB.

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A Novel Configuration of a Microstrip Microwave Wideband Power Amplifier for Wireless Application

Cited by 9 publications

References 11 publications

Broadband GaAs FET Power Amplifier for L and S Bands Applications

Broadband GaAs FET Power Amplifier for L and S Bands Applications

Design of high power amplifier based on wilkinson power combiner for wireless communications

Broadband Solid State GaAs Power Amplifier for L and S Bands Applications.

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