Broadband Solid State GaAs Power Amplifier for L and S Bands Applications.

Ribate, Mohamed; Mandry, Rachid; Abdellaoui, Larbi El; Errkik, Ahmed; Latrach, Mohamed

doi:10.4108/eai.24-4-2019.2284102

Cited by 2 publications

(2 citation statements)

References 14 publications

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“…The RFID (Radio Frequency Identification) devices becoming more and more deployed in our life and finding use in the non-line-of-sight applications. Indeed, almost every communication system has some sort of transceiver, and intrinsically a power amplifier (PA) running in one of the following bands defined by IEEE standard 521-1984: L -S -C -X or Ku band [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

A trade-off design of microstrip broadband power amplifier for UHF applications

Ribate

Mandry

Zbitou

et al. 2020

IJECE

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In this paper, the design of a Broadband Power Amplifier for UHF applications is presented. The proposed BPA is based on ATF13876 Agilent active device. The biasing and matching networks both are implemented by using microstrip transmission lines. The input and output matching circuits are designed by combining two broadband matching techniques: a binomial multi-section quarter wave impedance transformer and an approximate transformation of previously designed lumped elements. The proposed BPA shows excellent performances in terms of impedance matching, power gain and unconditionally stability over the operating bandwidth ranging from 1.2 GHz to 3.3 GHz. At 2.2 GHz, the large signal simulation shows a saturated output power of 18.875 dBm with an output 1-dB compression point of 6.5 dBm of input level and a maximum PAE of 36.26%. Electronics in Faculty of sciences and techniques, University Hassan 1st, Settat, Morocco. He is involved in the design of hybrid, monolithic active and passive microwave electronic circuits Ahmed Errkik was born in July 1960 in Morocco. He received the Ph.D. degree in physics from the University of Technology Compiegne (UTC), France. He is currently an associate Professor of physics in FST University Hassan 1st, Settat, Morocco. He is involved in the design of hybrid, monolithic active and passive microwave electronic circuits.Int J Elec & Comp Eng ISSN: 2088-8708  A trade-off design of microstrip broadband power amplifier for UHF applications (Mohamed Ribate) 927 Mohamed Latrach was born in Douar Ksiba, Sless, Morocco, in 1958. He received the Ph.D. degree in electronics from the University of Limoges, Limoges, France, in 1990. He is currently a Professor of microwave engineering with the Ecole Suprieure d'Electronique de l'Ouest (ESEO), Angers, France, where his research involves RF and microwaves. His field of interest is the design of hybrid, monolithic active, and passive microwave circuits, metamaterials, LH materials, antennas and their applications in wireless Communications. Ahmed Lakhssassi received the B.Eng. and M.Sc. in electrical engineering from University of Quebec à Trois-Rivières, Quebec, Canada in 1988 and 1990 respectively. He also received the Ph. D in Energy and Material sciences in 1995 from INRS-Energie et Matériaux, Quebec, Canada. His research interest is the fields of bio-heat thermal modeling. Also, his research interest is in Design of fully automated tool for porting analog and mixed signal circuits within different technology nodes.

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Section: Introductionmentioning

confidence: 99%

A trade-off design of microstrip broadband power amplifier for UHF applications

Ribate

Mandry

Zbitou

et al. 2020

IJECE

Self Cite

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“…However, this scheme is good for VSWR performance and gain flatness up to about a two octave bandwidth [21][22]. On the other hand, the traveling-wave and distributed amplifiers have flat gain and wide frequency range, but the main drawbacks for these techniques reside in the moderate small signal gain, high dc power consumption, high noise figure and the large chip size owing to the high number of components used to achieve the same performance as a single stage PA [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Design of L-S band broadband power amplifier using microstip lines

Ribate

Mandry

Zbitou

et al. 2020

IJECE

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This contribution introduces a novel broadband power amplifier design, operating in the frequency band ranging from 1.5 GHz to 3 GHz which cover the mainstream applications running in L and S bands. Both matching and biasing networks are synthesized by using microstrip transmission lines. In order to provide a wide bandwidth, two broadband matching techniques are deployed for this purpose, the first technique is an approximate transformation of a previously designed lumped elements matching networks into microstrip matching circuits, and the second technique is a binomial multi-sections quarter wave impedance transformer. The proposed work is based on ATF-13786 active device. The simulation results depict a maximum power gain of 16.40 dB with an excellent input and output matching across 1.5 GHz ~ 3 GHz. At 2.2 GHz, the introduced BPA achieves a saturated output power of 16.26 dBm with a PAE of 21.74%, and a 1-dB compression point of 4.5 dBm input power level. The whole circuitry is unconditionally stable over the overall bandwidth. By considering the broadband matching, the proposed design compares positively with the most recently published BPA.

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Broadband Solid State GaAs Power Amplifier for L and S Bands Applications.

Cited by 2 publications

References 14 publications

A trade-off design of microstrip broadband power amplifier for UHF applications

A trade-off design of microstrip broadband power amplifier for UHF applications

Design of L-S band broadband power amplifier using microstip lines

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