A Novel Complementary Architecture of One-time-programmable Memory and Its Applications as Physical Unclonable Function (PUF) and One-time Password

Wang, W. C.; Chuang, Ching-Cheng; Chang, Chia-Wei; Hsieh, E. R.; Chen, H. W.; Chung, Steve S.

doi:10.1109/iedm13553.2020.9371898

Cited by 7 publications

(1 citation statement)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Table I shows the benchmark of the current fuse technologies on metal fuse, anti-fuse, dielectric fuse and via fuse in comparisons of materials, switching voltages, density, and applications. [13][14][15][16] Figure 4 shows SEM top-view images of the Pt/HfO x (4 nm)/SiO x (9 nm)/TiN ReRAM devices and via-fusing operation. Compared to ReRAM devices (Figs.…”

Section: Resultsmentioning

confidence: 99%

Bifunctional HfOx-based Resistive Memory: Reprogrammable and One-Time Programmable (OTP) Memory

Chen¹,

Chang²,

Lin³

et al. 2022

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The dual functions in HfOx-based ReRAM and 2V-programmable via-fuse technology featuring in simple metal-insulator-metal BEOL process are presented, which can integrate with the current metal fuse technology. The impact of via-size, ReRAM, and via-fusing programming windows, stacked structures, and integration capability has been extensively studied. The performance and reliability risk assessments show that the ReRAM and via fuse can sustain at 438 K for 500 hours without any degradation. Our results provide pathfinding of high density, integration capability, low programing voltage, multi-functionality between programmable read-only memory (PROM) and ReRAM co-existing in embedded applications.

show abstract

Section: Resultsmentioning

confidence: 99%