Abstract:Metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) are continuously scaling down in the nanoscale region to improve the functionality of integrated circuits. The scaling down of MOSFET devices causes short‐channel effects in the nanoscale region. In nanoscale region, leakage current components are increasing, resulting in substantial power dissipation. Very large‐scale integration designers are constantly exploring different effective methods of mitigating the power dissipation. In this study, a tran… Show more
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