2022
DOI: 10.1016/j.ijhydene.2022.02.067
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A novel all-solid-state S-scheme in CdS/ZnTHPP binary nanosystem for hydrogen evolution

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Cited by 12 publications
(2 citation statements)
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“…On the contrary, ZnO with increased electron density manifested downward band bending . Meanwhile, the buildup of positively and negatively charged layers originated on both sides of the interface, creating potential differences and producing an internal electric field (IEF) at the interface . The IEF and band bending are the characteristic features of the S-scheme.…”
Section: Pc Activitymentioning
confidence: 99%
See 1 more Smart Citation
“…On the contrary, ZnO with increased electron density manifested downward band bending . Meanwhile, the buildup of positively and negatively charged layers originated on both sides of the interface, creating potential differences and producing an internal electric field (IEF) at the interface . The IEF and band bending are the characteristic features of the S-scheme.…”
Section: Pc Activitymentioning
confidence: 99%
“… 51 Meanwhile, the buildup of positively and negatively charged layers originated on both sides of the interface, creating potential differences and producing an internal electric field (IEF) at the interface. 52 The IEF and band bending are the characteristic features of the S-scheme. The synergistic effect of EIF and band bending effectively promotes the transfer of photocarriers to follow the S-scheme mechanism.…”
Section: Pc Activitymentioning
confidence: 99%