2020
DOI: 10.1142/s0129156420400091
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A Novel Addressing Circuit for SWS-FET Based Multivalued Dynamic Random-Access Memory Array

Abstract: Multivalued memory increases the bits-per-cell storage capacity over conventional one transistor (1T) MOS based dynamic random-access memory (DRAM) by storing more than two data signal levels in each unit memory cell. A spatial wavefunction switched (SWS) field effect transistor (FET) has two vertically stacked quantum-well/quantum-dot channels between the source and drain regions. The charge location in upper or lower quantum channel region is based on the input gate voltage. A multivalued DRAM that can store… Show more

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“…Line-scans of the laser far-field along the θ direction were obtained as the stage was rotated in the horizontal plane. The relative height of the cryostat and the bolometer was adjusted to allow many line-scans of the device far-field to be obtained and finally constructed into a 2D map (Gudlavalleti et al, 2021).…”
Section: Terahertz Plasmatic Collimator Design 4 Results and Discussionmentioning
confidence: 99%
“…Line-scans of the laser far-field along the θ direction were obtained as the stage was rotated in the horizontal plane. The relative height of the cryostat and the bolometer was adjusted to allow many line-scans of the device far-field to be obtained and finally constructed into a 2D map (Gudlavalleti et al, 2021).…”
Section: Terahertz Plasmatic Collimator Design 4 Results and Discussionmentioning
confidence: 99%
“…SOCR relaxation is accurate and highly efficient for various classes of problems in radial networks [6]. Recent surveys on these relaxations can be found in the literature [7,20,21].…”
Section: Introductionmentioning
confidence: 99%