A novel active gate driver for silicon carbide MOSFET

Paredes, Alejandro; Sala, Vicent; Ghorbani, Hamidreza; Romeral, L.

doi:10.1109/iecon.2016.7793222

Cited by 30 publications

(4 citation statements)

References 20 publications

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“…A summary of the requirements for the SiC drive circuits and the designed circuits to suppress crosstalk is presented in [45] and [46]. In [47] and [48], AGD is introduced into a SiC drive circuit to suppress overshoots by controlling the value of the gate resistor (R g ) during the Miller plateau effect. In [49] and [50], a logic circuit-based AGD is applied to dynamically adjust the effective value of R g to achieve an improved trade-off between fast switching duration and suppressing voltage ringing.…”

Section: B Improved Gate Drive Circuit For Power Devicesmentioning

confidence: 99%

A Review on Conductive Common-Mode EMI Suppression Methods in Inverter Fed Motor Drives

Zhang

Chen

et al. 2021

IEEE Access

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The impact of electromagnetic interference (EMI) is an increasingly important aspect of the performance of switching inverters. The challenges of managing EMI continue to grow with the emergence of wide bandgap (WBG) devices, the trend towards ever-greater integration and higher power rating. This paper reviews suppression methods for the conductive common-mode (CM) EMI in inverter fed motor drives. In order to span EMI suppression across the full system design process, the review considers both mitigation from the sources and suppression along the conduction paths. Furthermore, the shortcomings and merits of the reviewed publications are discussed, and their attenuation frequency range and attenuation level are compared. It is demonstrated that the CM EMI at low frequency is mainly determined by the PWM strategies and can be reduced or even theoretically eliminated through zero common-mode control. On the other hand, the CM EMI at high frequency is markedly influenced by the switching transients of the power devices. Thus, various drive circuits are reviewed which improve the switching behavior. Finally, the deployment of passive and active filters to suppress or compensate for the EMI is discussed.INDEX TERMS Conductive EMI, EMI sources, inverter fed motor drives, propagation paths.

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Section: B Improved Gate Drive Circuit For Power Devicesmentioning

confidence: 99%

A Review on Conductive Common-Mode EMI Suppression Methods in Inverter Fed Motor Drives

Zhang

Chen

et al. 2021

IEEE Access

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“…In addition, some advanced gate drivers were proposed to suppress the voltage overshoot in SiC MOSFET. In [9], an active gate driver was demonstrated to reduce the over‐voltage (OV) and ringing, but with a higher switching loss. In [10], a gate driver with switched capacitor circuit was introduced to reduce the surge voltage and switching time.…”

Section: Introductionmentioning

confidence: 99%

Design of high‐speed gate driver to reduce switching loss and mitigate parasitic effects for SiC MOSFET

Yin

Tseng

Tong

et al. 2017

IET Power Electronics

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The high switching speed in a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) will aggravate the parasitic effects (di/dt and dv/dt) arising from the interaction with parasitic elements. In this project, a high-speed gate driver has been developed and optimised for the commercially available SiC MOSFET power module. The impact of various parasitic parameters on parasitic effects is initially evaluated. Then, an improved gate-assisted circuit is proposed with a local low-impedance path for both discharging and Cdv/dt currents. It allows maximised turn-off speed (dv/dt up to 36 V/ns) and minimised turn-off loss (reduction up to 70%). It also produces a reduction in electromagnetic interference. The gate voltage spike due to Cdv/dt current is reduced below the threshold voltage at various testing conditions.

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“…The AGD comprises a gate drive circuit and a control unit for the gate drive circuit, thereby providing appropriate control signals. Typically, variable gate resistors [3][4][5] , variable gate capacitors [6] , and variable current [7][8][9][10] or voltage sources [11][12][13][14] are utilized to control the gate signal. A schematic illustration of these gate driver topologies is presented in Fig.…”

mentioning

confidence: 99%

“…A more flexible approach is described in Ref. [4], where an analog circuit was used to sense the switching state of the transistor and adjust the gate resistance accordingly. Another approach is to determine an appropriate voltage or current gate switching signal by employing optimization techniques.…”

mentioning

confidence: 99%

Frequency-selective Optimization of Periodic Gate Control Signals in DC/DC Converters for EMI-reduction

Krause

Frei

2022

Chin. J. Electr. Eng.

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High-frequency switching of power transistors in power electronic systems can cause electromagnetic emissions.Simple approaches for reducing high-frequency disturbances, such as inserting an additional gate resistor, lead to increased power losses. This makes achieving both electromagnetic compatibility and power efficiency difficult. Active gate drivers help to find a trade-off between these two. Typically, only narrow-band disturbances must be reduced. Accordingly, a target signal with a spectrum notched at some frequencies can be defined. The target signal can be reached by a target-signal-oriented control of the transistor's gate. This leads to steeper switching slopes, such that the power losses are less increased. Generating arbitrary target signals is impossible. The transistor signal exhibits some physical limitations. A constraint satisfaction problem must be solved, and the gate drive signal must be optimized by applying a residual and Newton's method. The proposed optimization process in the frequency domain is based on the circuit simulation method named "harmonic balance".Measurements on a DC/DC converter exhibit the benefits of this method.

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A novel active gate driver for silicon carbide MOSFET

Cited by 30 publications

References 20 publications

A Review on Conductive Common-Mode EMI Suppression Methods in Inverter Fed Motor Drives

A Review on Conductive Common-Mode EMI Suppression Methods in Inverter Fed Motor Drives

Design of high‐speed gate driver to reduce switching loss and mitigate parasitic effects for SiC MOSFET

Frequency-selective Optimization of Periodic Gate Control Signals in DC/DC Converters for EMI-reduction

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