A novel 4 x 8 single-mode independently addressable oxide-isolated VCSEL array

Giaretta, G.; Li, M.Y.; Li, G.S.; Yuen, W.; Chang-Hasnain, Constance J.

doi:10.1109/68.618475

Cited by 11 publications

(10 citation statements)

References 8 publications

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“…With an increase in the forward current, they it first present a single spot with a Gaussian profile, and then gradually evolve into an annular shape as a result of the emergence of first high-order mode. 7,8 In order to investigate the latent effect of the ESD stress level on the lifetime of these LD samples, we employed 10 samples that divided into two groups. Figure 4͑b͒ shows the divergence angle as a function of the forward current for the LDs with/without ESD stress bias.…”

Section: Resultsmentioning

confidence: 99%

Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

Huang

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inMultiwavelength fabrication of vertical-cavity surface-emitting lasers based on asymmetric one-dimensional photonic crystalInterpretation of polarization pinning due to scattering loss differentiation in asymmetric vertical-cavity surfaceemitting laser cavitiesIn this article, we investigate the influence of electrostatic discharge ͑ESD͒ stress voltage on the device performance of 850 nm vertical-cavity surface-emitting lasers ͑VCSELs͒. The ESD effect induces dark-region defects, which act as nonradiative recombination centers in the active layer and increase the leakage current and degrade the light output power. Without ESD stress voltage, the VCSELs exhibit multiple transverse mode. However, the devices exhibit a weak but single fundamental mode with smaller beam divergence by increasing the stress voltage up to 2.6 kV. In addition, the VCSELs have serious degradation in light output power and a lifetime of less than 5 h at stress voltage beyond the ESD threshold voltage of 1.2 kV.

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Section: Resultsmentioning

confidence: 99%

Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

Huang

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Consequently, novel all-epitaxial device architectures have been developed to overcome this problem. 5,6 In this letter, we show that good laser performance can be achieved using transparent indium-tin-oxide ͑ITO͒ contacts in planar laterally oxidized 6 VCSEL structures. Demonstrating this capability is of interest because transparent contacts enable device packing densities far in excess of those achievable from similar structures using metal contacts.…”

mentioning

confidence: 79%

“…Finally, a eutectic Ge/Au metal is evaporated to form the backside contact. Figure 2 displays the light versus current characteristics of 5,9,13,18,28 ͓011͔ direction. The 9 and 13 m devices also laser single mode at currents close to threshold, but become multimode at higher pump currents due to spatial hole burning.…”

mentioning

confidence: 99%

Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts

Chua

Thornton

Treat

et al. 1998

Applied Physics Letters

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We present top-emitting all-epitaxial planar laterally oxidized vertical-cavity surface-emitting lasers employing transparent indium–tin–oxide electrodes. The transparent contacts facilitate device fabrication and offer significantly denser device packing than similar planar laterally oxidized structures using metal contacts. The InAlGaAs-based devices operate at a wavelength of 817 nm with a minimum threshold current of 175 μA.

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“…For few moded VCSELs relevant to this work, there is some experimental evidence that the Gaussian beam model is a reasonable approximation [12] [13] .…”

Section: Vcsel Modelmentioning

confidence: 94%

Numerical study on multimode optical fiber link considering higher-order VCSEL modes

Zi¹,

Yang²

2008

Optical Transmission, Switching, and Subsystems VI

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Multimode VCSEL(Vertical Cavity Surface Emitting Laser) coupling into MMF (Multimode Optical Fiber) and its influence on MMF link has been numerically studied. Considering the transverse misalignment between VCSEL and MMF, coupling efficiency between VCSEL higher-order modes and modes of MMF is calculated and the Mode Power Distribution in the MMF is obtained. Simulation of MMF link with multimode VCSEL indicates that the higher-order VCSEL modes lead to decreasing of the eye opening of received signal. The transverse misalignment of VCSEL between MMF greatly deteriorates the eye opening. With 300m OM3-MMF link，the EOP (eye-opening-penalty) is greater than 14dB when the misalignment between VCSEL and MMF is lager than 5µm.

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A novel 4 x 8 single-mode independently addressable oxide-isolated VCSEL array

Cited by 11 publications

References 8 publications

Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

Low-threshold InAlGaAs vertical-cavity surface-emitting laser arrays using transparent contacts

Numerical study on multimode optical fiber link considering higher-order VCSEL modes

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