A normal-incidence PtSi photoemissive detector with black silicon light-trapping

Steglich, Mathias; Zilk, Matthias; Bingel, Astrid; Patzig, Christian; Käsebier, Thomas; Schrempel, Frank; Kley, Ernst‐Bernhard; Tünnermann, Andreas

doi:10.1063/1.4829897

Cited by 25 publications

(18 citation statements)

References 30 publications

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“…Facile fabrication of nano-or microporous silicon surface has been pursued over many years for potential applications in solar cells [1], lithium-ion batteries [2,3], microelectromechanical systems [4], H 2 production by photo-electrochemical splitting of water [5], drug delivery [6], optoelectronic and photonic devices [7][8][9][10][11][12][13][14][15], and chemical and biological sensors [16][17][18][19][20]. Bulk silicon has found applications in photodiodes, photodetectors, and photovoltaic devices [7].…”

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confidence: 99%

In Situ Formation of Nanoporous Silicon on a Silicon Wafer via the Magnesiothermic Reduction Reaction (MRR) of Diatomaceous Earth

et al. 2020

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Successful direct route production of silicon nanostructures from diatomaceous earth (DE) on a single crystalline silicon wafer via the magnesiothermic reduction reaction is reported. The formed porous coating of 6 µm overall thickness contains silicon as the majority phase along with minor traces of Mg, as evident from SEM-EDS and the Focused Ion Beam (FIB) analysis. Raman peaks of silicon at 519 cm−1 and 925 cm−1 were found in both the film and wafer substrate, and significant intensity variation was observed, consistent with the SEM observation of the directly formed silicon nanoflake layer. Microstructural analysis of the flakes reveals the presence of pores and cavities partially retained from the precursor diatomite powder. A considerable reduction in surface reflectivity was observed for the silicon nanoflakes, from 45% for silicon wafer to below 15%. The results open possibilities for producing nanostructured silicon with a vast range of functionalities.

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Section: Introductionmentioning

confidence: 99%

In Situ Formation of Nanoporous Silicon on a Silicon Wafer via the Magnesiothermic Reduction Reaction (MRR) of Diatomaceous Earth

et al. 2020

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“…Black silicon and moth-eye structures of PtSi in Refs. [8,9] improved the absorption mainly in the 1-2.5 μm shortwave-infrared wavelength range.…”

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confidence: 97%

“…Additionally, other efficient infrared lighttrapping schemes are required to increase the optical path length within the PtSi layer. These schemes include photonic crystals [5] and porous structures [6,7] , black silicon, and moth-eye light-trapping nanostructures [8][9][10][11] . Photonic crystals and porous structures involving texturing the PtSi active layer usually degrade the electrical performance of PtSi SBD.…”

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confidence: 99%

“…Thus, we model the theoretical EQE on the basis of the simulated AðλÞ. The Schottky-barrier height value is taken to 0.208 eV, as measured by Elabd and Kosonocky [37] under the same PtSi film thickness of 0.003 μm as ours, and the mean free path is taken as the typical value of 80 nm [8] . Figure 7 shows the EQE of the proposed PtSi SBD (blue dashed line) and conventional structure (red dashed line) in 3-5 μm.…”

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External quantum efficiency-enhanced PtSi Schottky-barrier detector utilizing plasmonic ZnO:Al nanoparticles and subwavelength gratings

2016

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A infrared light trapping structure combining front subwavelength gratings and rear ZnO:Al nanoparticles for a PtSi Schottky-barrier detector over a 3-5 μm waveband is theoretically investigated. By selecting the proper plasmonic material and optimizing the parameters for the proposed structure, the absorption of the PtSi layer is dramatically improved. The theoretical results show that this improvement eventually translates into an equivalent external quantum efficiency (EQE) enhancement of 2.46 times at 3-3.6 μm and 2.38 times at 3.6-5 μm compared to conventional structures. This improvement in the EQE mainly lies in the increase of light path lengths within the PtSi layer by the subwavelength grating diffraction and nanoparticle-scattering effects.

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“…The IQE can be improved by reducing the Schottky barrier height or thinning down the metalsilicide layer thickness to 2 to 8 nm, which is significantly less than the hot-carrier attenuation length. 11 Black silicon light-trapping and moth-eye surface structures [12][13][14][15] have also been extensively explored to improve the optical absorption, but the absorption of SBDs reported with these structures was improved only in shortwave-infrared wavelength range (1 to 2.5 μm). 4,5 So, comparing to IQE, improving EQE is more feasible.…”

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confidence: 99%

Improvement of external quantum efficiency of silicide Schottky-barrier detectors in the 3 to 5 μ m waveband with subwavelength-grating incident plane

2016

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Improvement of external quantum efficiency of silicide Schottkybarrier detectors in the 3 to 5 μm waveband with subwavelength-grating incident plane," Opt. Eng.Abstract. Silicide Schottky-barrier midwave infrared detectors for the 3 to 5 μm waveband typically use a 2 to 8 nm metal-silicide layer grown on silicon substrates as an absorption layer. We demonstrate the use of an SiO 2 -film-coated subwavelength grating as an antireflection incident plane in such detectors to enhance absorption at the 3 to 5 μm waveband in the metal-silicide layer for improving the external quantum efficiency (EQE). Taking a PtSi∕p-Si structure as an example, we fabricate samples and build a test platform to characterize the EQE of a PtSi∕p-Si Schottky-barrier detector. Simulation results show that low reflection efficiency (<9%) for the subwavelength-grating incident plane and factors of 1.5 to 1.8 enhancement in absorption of the PtSi layer are achieved at normal incidence across the 3 to 5 μm waveband. Measurement results show that this increase translates into factors of 1.3 to 1.7 enhancement in EQE. This improvement in EQE results from absorption enhancement due to antireflection effects and the forward scattering of incident infrared radiation in the subwavelength grating, which increases the effective optical path in the detector. The results also suggest that fabricating a subwavelength-grating incident plane is a general, low-cost method to enhance EQE in various infrared material platforms used for back-illuminated detectors. Downloaded From: http://opticalengineering.spiedigitallibrary.org/ on 06/15/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx Optical Engineering 047103-7 April 2016 • Vol. 55(4) Kang, Cai, and Wang: Improvement of external quantum efficiency of silicide. . . Downloaded From: http://opticalengineering.spiedigitallibrary.org/ on 06/15/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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A normal-incidence PtSi photoemissive detector with black silicon light-trapping

Cited by 25 publications

References 30 publications

In Situ Formation of Nanoporous Silicon on a Silicon Wafer via the Magnesiothermic Reduction Reaction (MRR) of Diatomaceous Earth

In Situ Formation of Nanoporous Silicon on a Silicon Wafer via the Magnesiothermic Reduction Reaction (MRR) of Diatomaceous Earth

External quantum efficiency-enhanced PtSi Schottky-barrier detector utilizing plasmonic ZnO:Al nanoparticles and subwavelength gratings

Improvement of external quantum efficiency of silicide Schottky-barrier detectors in the 3 to 5 μ m waveband with subwavelength-grating incident plane

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