A newly developed polishing pad for achieving high surface flatness without edge roll off

Enomoto, Toshiyuki; Satake, Urara; Miyake, Takahiro; Tabata, Norikazu

doi:10.1016/j.cirp.2011.03.125

Cited by 19 publications

(3 citation statements)

References 11 publications

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“…In order to obtain a good pressure control in the CMP process, the finite element method (FEM)-based models have been used to compute the stress distribution and analyze the nonuniformity on the wafer surface. [48][49][50] The relative magnitude and radial position of the observed removal rate is reasonably consistent with the simulated contact stress uniformity. Therefore, the computational simulation of the contact pressure indicates that the removal rate uniformity can be improved by strictly controlling the uniformity of contact stress distribution on the wafer surface.…”

supporting

confidence: 76%

A Wafer-Scale Material Removal Rate Model for Chemical Mechanical Planarization

Chen

Liu

et al. 2020

ECS J. Solid State Sci. Technol.

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In this work, a new wafer-scale material removal rate (MRR) model is proposed to investigate the underlying removal mechanism of wafer surface in the chemical mechanical planarization (CMP) process. Based on the governing equation of the plate theory, chemical reaction kinetics and wear theory, an analytical CMP model has been constructed to capture the influence of mechanical abrasion and chemical reactions on the removal rate with high efficiency. The effect of the elastic modulus of the pad, platen rotational speed, polishing temperature and reactant concentrations on the removal mechanism is investigated in detail to elucidate the intrinsic removal behavior. It is found that the material removal rate is sensitive to the elastic modulus of pad, temperature distribution, and chelator concentration, more sensitive to the oxidizer concentration, and most sensitive to the platen rotational speed. The magnitude of the removal rate can be adjusted significantly by properly selecting a good configuration of these influencing factors. The model predictions of the MRR profiles are consistent with the published experimental data at different polishing conditions. Therefore, the present CMP model can give insights into the wear mechanism of polishing process and may be utilized as a simulation tool for further optimization of removal rate and surface uniform control.

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supporting

confidence: 76%

A Wafer-Scale Material Removal Rate Model for Chemical Mechanical Planarization

Chen

Liu

et al. 2020

ECS J. Solid State Sci. Technol.

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“…According to the Preston equation, the removal rate of material in polishing is proportional to the contact stress and the relative velocity between the wafer and the polishing pad, which means the degree of edge roll-off is basically proportional to the contact stress distribution on the surface because the velocity at periphery of wafer is almost the same as that at center in polishing. Thus, the edge roll-off is considered to be generated by the significant increase in the contact stress near the wafer edge [3][4][5][6][7][8].…”

Section: Polishing Pad Properties Determining Edge Roll-offmentioning

confidence: 99%

“…Therefore, the zone of edge exclusion, where device chips cannot be manufactured, is set on the periphery of wafers. The width of the zone is seriously critical for the yield of the devices, and then the suppression in edge roll-off is strongly demanded in the wafer polishing [3][4][5].…”

Section: Introductionmentioning

confidence: 99%

New Evaluation Method of Polishing Pad Property for Estimating Edge Roll-Off of Silicon Wafer

Obayashi

Satake

Enomoto

2016

MSF

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With the ever-growing demand for further increase in the integration density of semiconductor devices, silicon wafers as the substrates for most devices are required to be extremely flat. In particular, it is strongly required to suppress edge roll-off, which seriously deteriorates the surface flatness near the wafer edge during polishing process in the final stage of the wafer manufacturing. In this study, we investigate the properties of polishing pads required for decreasing edge roll-off and propose the evaluation method of the properties. Polishing experiments with silicon wafers and evaluation tests for polishing pads reveal that the proposed method can estimate the obtained edge surface flatness.

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Surface Characteristics of Polished YAG Laser Crystal

Xie

Zhao

Liao

et al. 2019

Crystal Research and Technology

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Compared with ordinary optical glass, it is much more difficult to achieve high‐precision and ultra‐smooth surface processing on laser crystal materials. In order to improve the processing technology of large‐size Y3Al5O12 (YAG) laser crystal components, the surface characteristics of polished YAG crystal are studied. First, the surface mechanical properties of polished YAG crystal are investigated by nanoindentation technology, and the machinability of the crystal is basically evaluated. Then, the characteristics of surface flatness, defects, and surface roughness related to processing requirements of crystal components are further studied. The experimental results show that the high flatness, low defect density, and super smoothness of the surface of YAG crystal material can be obtained by optimizing the polishing process, that is, using a three‐step polishing method combining Al2O3 abrasive and the composite tin polishing plate.

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A newly developed polishing pad for achieving high surface flatness without edge roll off

Cited by 19 publications

References 11 publications

A Wafer-Scale Material Removal Rate Model for Chemical Mechanical Planarization

A Wafer-Scale Material Removal Rate Model for Chemical Mechanical Planarization

New Evaluation Method of Polishing Pad Property for Estimating Edge Roll-Off of Silicon Wafer

Surface Characteristics of Polished YAG Laser Crystal

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