A new way to achieve both selective and lateral growth by molecular beam epitaxy: low angle incidence microchannel epitaxy

Bacchin, G.; Nishinaga, Tatau

doi:10.1016/s0022-0248(99)00497-2

Cited by 32 publications

(10 citation statements)

References 7 publications

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“…While prevalent in III–V crystal growth, solid-source MBE has a well-known “coalescence problem”, historically lacking approaches for high-quality lateral epitaxial overgrowth and planar coalescence over micron-scaled dielectric structures, , in large part due to low diffusion of III-adatoms on dielectric surfaces, typically below 300 nm, readily forming polycrystalline deposition on dielectric surfaces exceeding a diffusion length. Several solid-source MBE highly selective growth and/or LEO growth approaches have been reported; − however, no reported techniques have demonstrated LEO with planar coalescence.…”

Section: Introductionmentioning

confidence: 99%

High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach

Ironside

Skipper

Leonard

et al. 2019

Crystal Growth & Design

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We demonstrate for the first time an entirely molecular beam epitaxy (MBE) approach to high-quality GaAs planar coalescence over embedded dielectric microstructures. Specifically, an all-MBE approach was achieved by developing a new two-stage growth process, merging the MBE growth regimes of III-flux modulated lateral epitaxial overgrowth (LEO) with self-ordered planarization of nonplanar substrates to produce highly selective planar coalescence specifically for embedding [010]-aligned silica gratings patterned on (001) substrates. The resulting planar coalescence returned a smooth (001) surface with surface roughness as low as 3 nm root-mean-square and photoluminescence (PL) equivalent to grating-free controls. In demonstrating high-quality GaAs coalescence, we also report for the first time an intentionally enhanced single InGaAs/GaAs/AlAs quantum well PL test structure seamlessly grown directly above embedded silica gratings, leading to a 1.4× enhancement in PL as a result of both Purcell and extraction enhancements corroborated by time-resolved PL studies. As a result, we provide a significant advance to the long-standing challenge of marrying high-quality semiconductor crystal growth with dielectric microstructures, unlocking several high-impact applications, such as enhanced quantum emitters and embedded metasurfaces for quantum information processing, and provide a pathway for all-MBE metamorphic III−V heteroepitaxy.

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Section: Introductionmentioning

confidence: 99%

High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach

Ironside

Skipper

Leonard

et al. 2019

Crystal Growth & Design

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“…From the images, the width of the laterally grown region is determined to be 1.57, 1.90 and 2.76 μm at (a) 780 °C, (b) 820 °C and 860 °C, respectively. A very flat (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) face is observed on the surface of the samples. The surface of the sample grown at 860 °C is slightly inclined on the right-hand side, which indicates that inter-surface diffusion occurred from the top to the side surface.…”

Section: Resultsmentioning

confidence: 98%

“…In conventional MOCVD, the growth rate exhibits only a very weak dependence on the crystal orientation. As a means of increasing the lateral to vertical growth ratio, we employed low angle incidence microchannel epitaxy (LAIMCE) to en-hance the lateral growth rate [13]. In LAIMCE, lateral growth is achieved by supplying molecular beams at a very low incidence angle to the substrate in molecular beam epitaxy (MBE).…”

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confidence: 99%

Temperature dependence of a‐plane GaN low angle incidence microchannel epitaxy by ammonia‐based metal‐organic molecular beam epitaxy

Naritsuka

Lin

Uchiyama

et al. 2012

Phys. Status Solidi C

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The growth temperature dependence of a‐plane GaN produced by low angle incidence microchannel epitaxy using NH3‐based metal‐organic molecular beam epitaxy was studied. It was found that the width of the laterally grown region increased with temperature. This was because at low temperatures, {10‐12} side facets were formed, which suppressed the lateral growth process by giving rise to inter‐surface diffusion of Ga adatoms from the side to the top of the growing layer. These facets also caused the lateral growth front to assume a zigzag shape. The formation mechanism of the facets can be understood in terms of the Mullin‐Sekerka instability, by which minute periodic undulations gradually increase with growth time when their period is larger than a certain critical value, which increases with growth temperature. Defects in the epitaxial layers were also studied using transmission electron microscopy. Although the defect density was found to be very low in the laterally grown layer itself, a very large number of dislocations and stacking faults were observed both in the template layer and in the epitaxial regions above the openings. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…In MCE of GaAs by MBE, one should employ relatively high growth temperature to prevent polycrystal deposits on SiO 2 [18]. On the other hand, in BILE as described later in detail, no SiO 2 mask is employed and hence, one can employ a low growth temperature even for MBE.…”

Section: ____________________mentioning

confidence: 99%

Beam induced lateral epitaxy: a new approach for lateral growth in molecular beam epitaxy

Suzuki¹,

Naritsuka²,

Maruyama³

et al. 2003

Cryst. Res. Technol.

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Epitaxial lateral growth has been conducted without using oxide masks by a new technique called as beam induced lateral epitaxy (BILE). In this technique, molecular beams are sent in a glancing angle with respect to a substrate in MBE and a large lateral growth was accomplished on a side of pre-fabricated truncated ridges on the substrate. By using BILE we have successfully grown GaAs in lateral direction on GaAs(001) substrate. It was found that the growth behavior of BILE depends strongly on incident angle of the Ga beam. With the incident angle of 12°, a lateral growth of nearly 6µm wide was achieved. Dedicated to Professor K. W. Benz on the occasion of his 65th birthday.

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A new way to achieve both selective and lateral growth by molecular beam epitaxy: low angle incidence microchannel epitaxy

Cited by 32 publications

References 7 publications

High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach

High-Quality GaAs Planar Coalescence over Embedded Dielectric Microstructures Using an All-MBE Approach

Temperature dependence of a‐plane GaN low angle incidence microchannel epitaxy by ammonia‐based metal‐organic molecular beam epitaxy

Beam induced lateral epitaxy: a new approach for lateral growth in molecular beam epitaxy

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