A new technique for characterization of thin-film ferroelectric memory devices

Röhrer, Georg; Narayan, S. P. Atul; McMillan, L. D.; Kulkarni, A. K.

doi:10.1116/1.575287

Cited by 17 publications

(3 citation statements)

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“…Phase III always reverted back to phase II, but the rate at which this process occurred was strongly affected by the tem-perature of the specimen [16][17][18]. Phase III structure, which is ferroelectric, can be applied ferroelectric memory devices [19][20][21][22]. Ferroelectric phase III of KNO 3 arises from a small shift of 0.55 Å of the nitrate groups along the c-axis from the centre of the unit cell, which creates a dipole moment.…”

Section: Materials and Its Propertiesmentioning

confidence: 99%

“…The scientific interest in potassium nitrate as a ferroelectric material is due to the attractive large signals that indicate the switching properties of its thin films form [19][20][21][22]. The square hysteresis loop, low switching potential (≤5 V), and fast switching times (≥20 ns) of KNO 3 thin films make them promising as a permanent storage medium in large scale integrated ferroelectric random access memories (Fe-RAMs) [6].…”

Section: Materials and Its Propertiesmentioning

confidence: 99%

“…Composite films of 30-40 μm thickness were obtained. Circular indium electrodes [22,42,43] having areas of 0.785×10 -2 cm 2 were vacuum deposited on both surfaces of the sample. The same method was employed to fabricate composite films of 50wt.% KNO 3 in PVF.…”

Section: Ferroelectric Composite Films By Using Melt Press Machinementioning

confidence: 99%

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Investigations of Ferroelectric Polarization Switching in Potassium Nitrate Composite Films

Kumar¹,

Nath²

2014

Transactions on Electrical and Electronic Materials

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This article explains the experimental results of ferroelectric polarization switching (FPS) of potassium nitrate (KNO 3) with different polymers such as polyvinylidene fluoride (PVDF) and polyvinyl fluoride (PVF) using simple melt-press techniques. To analyze the ferroelectric polarization switching in potassium nitrate (KNO 3) composite films at room temperature, we applied the Ishibashi and Takagi theory (based on Avrami model) to the switching current transient. To investigate the dimensionality of domain growth, the ferroelectric polarization switching current (FPS current) was observed from the square-wave bipolar signals across a resistance of 0.1 kΩ in series with the composite films. The existence of a switching current transient pulse confirmed the ferroelectricity and indicated the stability of the ferroelectric phase (phase III) of KNO 3 at room temperature. Polarization hysteresis (P-E) characteristics supported the prominent features of ferroelectric polarization switching in the composite films at room temperature.

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