A new T circuit topology for the broadband modelling of symmetric inductors fabricated in CMOS technology

Characterization and modeling of silicon devices for RF applications

“…An accurate physical model is essential in the circuit design, circuit simulation, evaluation of the process technology, and optimization of the balun design. Efficient modeling methods for calculating and fitting the model from the balun geometry and process parameters have been recently addressed,[13,20,21,127]. Unfortunately, these process parameters are often not always well-known for the particular modeling situation at hand.…”